D. Keogh

Graded-base InGaN∕GaN heterojunction bipolar light-emitting transistors

B. Chu-Kung, P. Asbeck, N. Holonyak, 2006 .

AlGaN/GaN High Electron Mobility Transistor Structure Design and Effects on Electrical Properties

J. Redwing, E. Piner, J. Flynn, 1999 .

Polarization charges and polarization-induced barriers in AlxGa1-xN/GaN and InyGa1-yN/GaN heterostructures

E. Yu, P. Asbeck, A. Roskowski, 2001 .

Digital etching of III-N materials using a two-step Ar/KOH technique

P. Asbeck, R. Dupuis, M. Feng, 2006 .

Influence of growth temperature on emission efficiency of InGaN/GaN multiple quantum wells

A. Cartwright, M. Cheung, J. Flynn, 2001 .

High current gain graded GaN/InGaN heterojunction bipolar transistors grown on sapphire and SiC substrates by metalorganic chemical vapor deposition

P. Asbeck, R. Dupuis, J. Limb, 2007 .

Analysis of GaN HBT structures for high power, high efficiency microwave amplifiers

P. Asbeck, R. Dupuis, M. Feng, 2004, Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004..

Device operation of InGaN heterojunction bipolar transistors with a graded emitter-base design

B. Chu-Kung, P. Asbeck, R. Dupuis, 2006 .

Growth of InGaN HBTs by MOCVD

P. Asbeck, R. Dupuis, M. Feng, 2006 .

Current status of GaN heterojunction bipolar transistors

P. Asbeck, R. Dupuis, M. Feng, 2004, Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting.