G. Benemanskaya

发表

Charge accumulation layers and surface states in ultrathin Cs,Ba/n-GaN(0001) interfaces

N. M. Shmidt, G. Benemanskaya, G. E. Frank-Kamentskaya, 2006 .

Charge accumulation layer on the n-GaN (0001) surface with ultrathin Ba coatings

G. Benemanskaya, G. Frank-Kamenetskaya, 2005 .

Electron accumulation layer at the Cs-covered GaN(0001) n-type surface

N. M. Shmidt, V. Vikhnin, G. Benemanskaya, 2004 .

Oscillations in the threshold photoemission spectra of GaN(0001) with submonolayer Cs coverages

N. M. Shmidt, V. Vikhnin, G. Benemanskaya, 2003 .

Surface states and accumulation nanolayer induced by Ba and Cs adsorption on the n-GaN(0 0 0 1) surface

G. Benemanskaya, M. N. Lapushkin, S. Timoshnev, 2009 .

Charge accumulation nanolayer: A 2D electronic channel in Cs/n-InGaN ultrathin interfaces

G. Benemanskaya, M. N. Lapushkin, S. Timoshnev, 2009 .

Modification of the electronic structure and formation of an accumulation layer in ultrathin Ba/n-GaN and Ba/n-AlGaN interfaces

D. Marchenko, G. Benemanskaya, G. Frank-Kamenetskaya, 2014 .

2D degenerate electron gas at Ba/n-AlGaN and Ba/n-GaN interfaces

G. Benemanskaya, G. Frank-Kamenetskaya, M. N. Lapushkin, 2011 .

Electronic structure of a Ba/n-AlGaN(0001) interface and the formation of a degenerate 2D electron gas

G. Benemanskaya, M. N. Lapushkin, S. Timoshnev, 2010 .

Drastic change in surface electronic properties and creation of a new carbon-based nanostructure on the vicinal SiC(111)-4° surface

S. Kukushkin, G. Benemanskaya, S. Timoshnev, 2020 .

Synchrotron radiation photoemission study of the ultrathin Cs/InN interface

G. Benemanskaya, M. N. Lapushkin, S. Timoshnev, 2015 .

CARBON-BASED NANOSTRUCTURE CREATED BY Ba AND Cs ATOMIC LAYER DEPOSITION ON THE VICINAL 3 CSiC ( 111 ) SURFACES

A. V. Osipov, S. Kukushkin, G. Benemanskaya, 2017 .

N. M. Shmidt, V. Vikhnin, G. Benemanskaya, 2005 .

Changes in electronic and adsorption properties under Cs adsorption on GaAs(100) in the transition from As-rich to Ga-rich surface

D. Daineka, G. Benemanskaya, G. Frank-Kamenetskaya, 2003 .

Near-threshold enhancement in photoemission from alkali metal overlayers

G. Benemanskaya, A. Liebsch, M. N. Lapushkin, 1994 .

Electronic surface states of submonolayer Cs and Ba films on (100), (110), (111) W

G. Benemanskaya, O. Burmistrova, M. N. Lapushkin, 1989 .

Charge accumulation in ultrathin Cs / n - GaN and Cs / n - InGaN interfaces

G. Benemanskaya, S. Ivanov, M. N. Lapushkin, 2007 .

Charge accumulation layer in Cs,Ba/n-GaN(0001) ultrathin interfaces: Electronic and photoemission properties

G. Benemanskaya, M. N. Lapushkin, S. Timoshnev, 2007 .

Variation of the electronic and adsorption properties of GaAs(100) in the transition from an As-to Ga-rich surface

D. Daineka, G. Benemanskaya, G. Frank-Kamenetskaya, 2002 .

Excitation of 2D plasmons in a Cs/W(110) system

G. Benemanskaya, G. Frank-Kamenetskaya, K. E. Rovinskii, 2001 .

The electronic properties of the Cs/GaAs(100) interface and the formation of metastable Cs clusters

D. Daineka, G. Benemanskaya, G. Frank-Kamenetskaya, 2001 .

Electronic properties of the Cs covered GaAs(100) Ga-rich surface

D. Daineka, G. Benemanskaya, G. Frank-Kamenetskaya, 2000 .

Electronic properties of cesium ultrathin coatings on the Ga-rich GaAs(100) surface

V. Evtikhiev, G. Benemanskaya, G. Frank-Kamenetskaya, 2000 .

Development of electronic band structure of the K-adsorbed Si(111)7 × 7 surface

D. Daineka, G. Benemanskaya, G. Frank-Kamenetskaya, 1999 .

Electronic Structure of the Ultrathin Cs/Si(100)-(2 × 1) and Cs/Si(111)-(7 × 7) Interfaces in the Threshold Energy Region

D. Daineka, G. Benemanskaya, G. Frank-Kamenetskaya, 1998 .

Electronic structure and adsorption properties of the system Cs/O/W(110)

D. Daineka, G. Benemanskaya, G. Frank-Kamenetskaya, 1997 .

Near-Fermi level surface states induced by Cs adsorption on the Si(111)7×7 surface

G. Benemanskaya, G. Frank-Kamenetskaya, M. N. Lapushkin, 1995 .

The nature of the vectorial photoelectric effect in the threshold energy region

G. Fraser, G. Benemanskaya, Y. Gnedin, 1994 .

Electronic structure and local interactions on a S(100) 2×1 surface with submonolayer Ba overlayers

D. Daineka, G. Benemanskaya, G. Frank-Kamenetskaya, 1998 .

Electronic structure of ultrathin Cs coatings on a Si(100)2×1 surface

D. Daineka, G. Benemanskaya, F. É. Frank-Kamenetskaya, 1997 .

Destruction and appearance of surface metallization in the system K/Si(111) 7×37

D. Daineka, G. Benemanskaya, G. Frank-Kamenetskaya, 1997 .

PHOTOINDUCED 2D PLASMON MODES IN Cs NANOCLUSTERS ON THE GaAs(100)Ga-RICH SURFACE

V. Evtikhiev, G. Benemanskaya, G. Frank-Kamenetskaya, 2007 .

Accumulation nanolayer and surface states of ultrathin Cs, Ba/n-GaN interfaces

G. Benemanskaya, G. Frank-Kamenetskaya, S. Timoshnev, 2009 .

Self-organization of nanostructures on the n-GaN(0001) surface in the Cs and Ba adsorption

V. Vikhnin, G. Benemanskaya, S. Timoshnev, 2008 .

A Model of Vibronic Interaction in a Quasi-2D System: Cooperative Pseudo-Jahn-Teller Effect on a Silicon Surface with Ba Submonolayers*

V. Vikhnin, G. Benemanskaya, 1997 .

Soft X-ray photoelectron spectroscopy of the ultrathin Ba/InGaN interface

G. Benemanskaya, S. Timoshnev, V. P. Pronin, 2017 .

Feasibility of using the threshold photoemission in studies of surface states of submonolayer metal films

M. Urbakh, A. Tybulewicz, G. Benemanskaya, 1992 .

The Electronic Structure of the Cs/n-GaN(0001) Nano-Interface

D. Marchenko, G. Benemanskaya, M. N. Lapushkin, 2018 .

Photoemission studies of the vicinal SiC(100) 4° surface and the Cs/SiC(100) 4° interface

S. Kukushkin, G. Benemanskaya, P. Dementev, 2016 .

The C 1s core level spectroscopy of carbon atoms at the surface SiC/Si(111)-4° layer and Cs/SiC/Si(111)-4° interface

S. Kukushkin, G. Benemanskaya, M. N. Lapushkin, 2016 .

Induced surface states of the ultrathin Ba/3C-SiC(111) interface

S. Kukushkin, G. Benemanskaya, P. Dementev, 2016 .

Synchrotron-radiation photoemission study of the ultrathin Ba/3C–SiC(111) interface

B. Senkovskiy, S. Kukushkin, G. Benemanskaya, 2016 .

A New Type of Carbon Nanostructure on a Vicinal SiС(111)-8° Surface

S. Kukushkin, G. Benemanskaya, S. Timoshnev, 2019, Technical Physics Letters.

Soft X-ray photoemission study of Ba adsorption on the ceramic multiferroic BiFeO3

G. Benemanskaya, P. Dementev, S. Timoshnev, 2018, Journal of Physics: Conference Series.

Soft x-ray photoemission spectroscopy of the Ba atomic layer deposition on the ceramic multiferroic BiFeO3

B. Senkovskiy, G. Benemanskaya, S. Timoshnev, 2017 .

Synchrotron-based photoemission study of electronic structure of the Cs/GaN ultrathin interface

S. Kukushkin, G. Benemanskaya, S. Timoshnev, 2018 .

The processes occurring in the surface region of CdS single crystals under electron bombardment, photoexcitation, and gas adsorption and their role in the 80 °K-exciton photoluminescence

G. Benemanskaya, B. Novikov, A. E. Cherednichencko, 1973 .

Photosensors for PET scanner on the base of BaF2 crystals

I. A. Mironov, D. Seliverstov, V. Ivochkin, 2009 .

The Electronic Structure of the Cs/n-GaN(0001) Nano-Interface

D. Marchenko, G. Benemanskaya, S. Timoshnev, 2018, Technical Physics Letters.

Synchrotron-Radiation Photoemission Study of the Ba Atomic Layer Deposition on Multiferroic BiFeO 3

G. Benemanskaya, G. Frank-Kamenetskaya, P. Dementev, 2017 .

Photoelectron spectroscopy of electronic surface structure of the Cs/GaN and Cs/InN interfaces

G. Benemanskaya, S. Timoshnev, T. Minashvili, 2020, Surface and Interface Analysis.

Photoemission Studies of the Electronic Structure of GaN Grown by Plasma Assisted Molecular Beam Epitaxy

S. Kukushkin, G. Benemanskaya, A. Mizerov, 2019, Physics of the Solid State.

A cryostat for electron irradiation of crystals and for optical studies

G. Benemanskaya, B. Novikov, A. Cherednichenko, 1976 .