D. Disanto

Aluminum gallium nitride/gallium nitride high electron mobility transistor fabrication and characterization

D. Disanto, 2005 .

Smooth wet etching by ultraviolet-assisted photoetching and its application to the fabrication of AlGaN/GaN heterostructure field-effect transistors

J. B. Webb, Haipeng Tang, H. Maher, 2000 .

Wet etching and its application to the fabrication and characterization of AlGaN/GaN HFETs

J. B. Webb, H. Maher, C. Bolognesi, 2000, Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122).

High-speed AlGaN/GaN HFETs fabricated by wet etching mesa isolation

Haipeng Tang, J. Bardwell, H. Maher, 2000 .

Gate-to-drain separation and transistor cutoff frequency in wet etched AlGaN/GaN HFETs

C. Bolognesi, D. Disanto, A.C. Kwan, 2002 .

Transistor delay analysis and effective channel velocity extraction in AlGaN/GaN HFETs

C. Bolognesi, D. Disanto, A.C. Kwan, 2002, Digest. International Electron Devices Meeting,.

At bias extraction of parasitic source and drain resistances in AlGaN/GaN HFETs: bias dependence and implications for device modelling and physics

C. Bolognesi, D. Disanto, 2006 .

Ozone passivation of slow transient current collapse in AlGaN∕GaN field-effect transistors: The role of threading dislocations and the passivation mechanism

C. Bolognesi, D. Disanto, H. Sun, 2006 .

At-Bias Extraction of Access Parasitic Resistances in AlGaN/GaN HEMTs: Impact on Device Linearity and Channel Electron Velocity

C. Bolognesi, C.R. Bolognesi, D. Disanto, 2006, IEEE Transactions on Electron Devices.