A. Grzegorczyk

发表

Statistical photoluminescence of dislocations and associated defects in heteroepitaxial GaN grown by metal organic chemical vapor deposition

P. Larsen, J. Weyher, L. Macht, 2005 .

Influence of the nucleation layer morphology and epilayer structure on the resistivity of GaN films grown on c-plane sapphire by MOCVD

P. Larsen, J. Weyher, P. Hageman, 2005 .

Influence of sapphire annealing in trimethylgallium atmosphere on GaN epitaxy by MOCVD

P. Larsen, J. Weyher, P. Hageman, 2005 .

Below bandgap transitions in an AlGaN/GaN transistor heterostructure observed by photoreflectance spectroscopy

P. Larsen, M. Syperek, J. Misiewicz, 2006 .

Improvement of the optical and structural properties of MOCVD grown GaN on sapphire by an in-situ SiN treatment

P. Larsen, J. Weyher, S. Haffouz, 2001 .

An electrochemical study of photoetching of heteroepitaxial GaN: kinetics and morphology

P. Larsen, J. Weyher, J. Kelly, 2005 .

Influence of sapphire annealing in a trimethylaluminum atmosphere on GaN epitaxy by metal-organic chemical vapor deposition

P. Larsen, J. Weyher, P. Hageman, 2008 .

High quality GaN layers on Si(111) substrates: AlN buffer layer optimisation and insertion of a SiN intermediate layer

S. Haffouz, P. K. Larsen, P. Larsen, 2001 .

Method for HVPE growth of thick crack-free GaN layers

P. K. Larsen, C.E.C. Dam, P. Larsen, 2006 .

The effect of HVPE reactor geometry on GaN growth rate—experiments versus simulations

Chris R. Kleijn, P. K. Larsen, C.E.C. Dam, 2004 .

Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (1 1 1) substrates

P. Larsen, P. Vennégués, S. Haffouz, 2003 .

What Makes Good Templates for HVPE GaN Growth

P. Larsen, P. Hageman, A. Grzegorczyk, 2005 .

Influence of the misorientation of 4H-SiC substrates on the morphology and crack formation in hetero epitaxial MOCVD grown GaN epilayers

P. Larsen, H. Jos, P. Hageman, 2005 .