Xianglin Liu

发表

Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001)sapphire substrate

Xiaohui Wang, Dabing Li, Ze Zhang, 2003 .

Transport phenomena in radial flow MOCVD reactor with three concentric vertical inlets

Hong Zhang, Ran Zuo, Ran Zuo, 2006 .

The growth morphologies of GaN layer on Si(111) substrate

Xiaohui Wang, Zhan-guo Wang, X. Duan, 2003 .

Investigation of GaN layer grown on Si(111) substrate using an ultrathin AlN wetting layer

Xiaohui Wang, Zhan-guo Wang, P. Han, 2002 .

Growth of crack-free GaN films on Si(111) substrate by using Al-rich AlN buffer layer

Xiaohui Wang, Zhan-guo Wang, Qinsheng Zhu, 2004 .

Luminescence properties of multi-layer InGaN quantum dots grown on C- and

Zhenghan Wang, S. Chua, S. Tripathy, 2005 .

Photoluminescence of GaInP under high pressure

Jianrong Dong, Zhan-guo Wang, Guohua Li, 1996 .

Ordering along 〈111〉 and 〈100〉 directions in GaInP demonstrated by photoluminescence under hydrostatic pressure

Jianrong Dong, Zhan-guo Wang, Guohua Li, 1996 .

Hydrogen diffusion into the subsurfaces of model metal catalysts from first principles.

Yuanjie Li, Jian Gao, Xianglin Liu, 2017, Physical chemistry chemical physics : PCCP.

Wurtzite GaN epitaxial growth on a Si(001) substrate using γ-Al2O3 as an intermediate layer

Lianshan Wang, Zhanguo Wang, Xianglin Liu, 1998 .

Growth of GaSb and GaAsSb in Single Phase Region by MOVPE

Xianglin Liu, Da-cheng Lu, Du Wang, 1992, Sixth International Conference Metalorganic Vapor Phase Epitaxy.

Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method

Xiaohui Wang, Zhan-guo Wang, P. Han, 2003 .

Photoluminescence of ordered Ga0.5In0.5P grown by metalorganic vapor phase epitaxy

Xiaohui Wang, Zhan-guo Wang, Xianglin Liu, 1995 .

The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy

Xiaohui Wang, Lianshan Wang, D. Wang, 1998 .

Influence of the growth temperature of the high-temperature AlN buffer on the properties of GaN grown on Si(111) substrate

Dabing Li, Xiaohui Wang, Dabing Li, 2004 .

The influence of thickness on properties of GaN buffer layer and heavily Si-doped GaN grown by metalorganic vapor-phase epitaxy

Xiaohui Wang, Lianshan Wang, Xianglin Liu, 1998 .

A geometrical model of GaN morphology in initial growth stage

Xiaohui Wang, P. Han, Xianglin Liu, 2002 .

Statistical investigation on morphology development of gallium nitride in initial growth stage

Xiaohui Wang, P. Han, Xianglin Liu, 2002 .

Luminescence study of (1120) GaN film grown by metalorganic chemical-vapor deposition

Xiaohui Wang, Zhan-guo Wang, P. Han, 2003 .

Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition

J. Li, Xiaohui Wang, Dabing Li, 2004 .

Fabrication of GaN epitaxial films on Al2O3/Si (001) substrates

Lianshan Wang, Zhanguo Wang, Xianglin Liu, 1998 .

In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE

Xiaohui Wang, Chengxin Wang, Xianglin Liu, 2000 .

METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF GAN

Xiaohui Wang, Xianglin Liu, Da-cheng Lu, 1995 .

The growth and characterization of GaN grown on an Al2O3 coated (001)Si substrate by metalorganic vapor phase epitaxy

Ze Zhang, Zhan-guo Wang, Lianshan Wang, 1998 .