Ke Chen

发表

Raman scattering spectra in C-implanted GaN epilayers

S. Chua, G. Qin, Lianshan Wang, 2001 .

Local vibrational modes in Gamma-irradiated GaN grown by metal-organic chemical vapor deposition

S. Chua, G. Qin, Weiyuan Sun, 2001 .

High-resolution transmission microscope observation of both nanometer crystalline diamond and graphite in C-implanted GaN

Z. J. Yang, G. Qin, G. Y. Zhang, 2001 .

Formation and dissolution of microcrystalline graphite in carbon-implanted GaN

Z. J. Yang, S. T. Wang, J. Lin, 2000 .

RECTIFICATION PROPERTIES AND INTERFACE STATES OF HETEROJUNCTIONS BETWEEN SOLID C60 AND N-TYPE GAAS

Z. Gu, G. Qin, Ke Chen, 1996 .

Electron states at a solid interface

Z. Gu, G. Qin, Ke Chen, 1996 .

Heterojunctions of solid C60 and crystalline silicon: rectifying properties and energy-band models

Z. Gu, Wenbing Zhao, Ke Chen, 1995 .

Probing highly deep levels in solid C70 with isothermal capacitance transience-time spectroscopy

G. Ran, Ke Chen, Haifeng Liu, 2004 .

Growth and characterization of silicon molecular beam epilayers on GaP (111) substrates

Guoliang Zhou, Xun Wang, Ke Chen, 1987 .

Electrical characteristics for solid C60/GaN heterojunctions

Z. Gu, G. Qin, Ke Chen, 1999 .

Heterojunctions of solid C70 and crystalline silicon: Rectifying properties and barrier heights

Z. Gu, Ke Chen, Chunxi Li, 1995 .