Jeon-Wook Yang

发表

Wideband AlGaN-GaN HEMTs on SiC for low noise applications

M. Khan, I. Adesida, Wu Lu, 2000, 58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526).

A new extraction method to determine bias-dependent source series resistance in GaAs FET's

Chul Soon Park, Jae Jin Lee, Chung-Hwan Kim, 1998 .

Polarization-Stable Single-Mode Tunable VCSELs Using an Internal Mesa Heater

Y. Song, H. Jang, G. Yang, 2009, IEEE Photonics Technology Letters.

Impact of nanoscale patterning on Schottky contact resistance in AlGaN/GaN Schottky barrier diode

Jeon-Wook Yang, Jeong Jin Kim, Yong Park, 2018, Japanese Journal of Applied Physics.

Photoenhanced Electrochemical Etching of n-GaN Forced by Negative Bias

J. Seo, Hyung Jae Lee, Jeon-Wook Yang, 2001 .

Selective Si interdiffusion into ion implanted GaAs from SiN and its application to GaAs MESFET

J. Mun, H. Ahn, J. Seo, 2002 .

Al2O3 surface passivation and MOS-gate fabrication on AlGaN/GaN high-electron-mobility transistors without Al2O3 etching process

J. Mun, D. Jung, H. Jang, 2015 .

Properties of WNx films and WNx/GaAs Schottky diodes prepared by ion beam assisted deposition technique

Jin-Yeong Kang, Jeon-Wook Yang, Ju-Wook Lee, 1990 .

The low-frequency noise characteristics of p-type metal-oxide-semiconductor field effect transistors with a strained-Si0.88Ge0.12 channel grown on bulk Si and a PD-SOI substrate

Kyu-Hwan Shim, A-Ram Choi, Deok-Ho Cho, 2008 .

GaN etch enhancement in inductively coupled BCl3 plasma with the addition of N2 and SF6 gas

Jeon-Wook Yang, K. Lim, Changyong Oh, 2004 .

Lateral Epitaxial Overgrowth of GaN and Its Crystallographic Tilt Depending on the Growth Condition

Junhyun Choi, G. Yang, Jeon-Wook Yang, 2000 .

Comparative study of low frequency noise and hot-carrier reliability in SiGe PD SOI pMOSFETs

J. Yang, Jeon-Wook Yang, K. Shim, 2008 .

Stress Effect Analysis for PD SOI pMOSFETs with Undoped-Si0.88Ge0.12 Heterostructure Channel

Kyu-Hwan Shim, Yong-Woo Hwang, Jae-Yeon Kim, 2007, IEICE Trans. Electron..

Allowable Substrate Bias for the Etching of n‐GaN in Photo‐Enhanced Electrochemical Etching

C. S. Oh, J. Yang, G. Yang, 2001 .

Correlation of reverse leakage current conduction mechanism and electrostatic discharge robustness of transient voltage suppression diode

Chel-Jong Choi, Sangmoo Choi, Jeon-Wook Yang, 2014, Electronic Materials Letters.

Growth and Characterization of GaN Epilayers on Chemically Etched Surface of 3C‐SiC Intermediate Layer Grown on Si(111) Substrate

K. Nahm, M. Kwon, Jeon-Wook Yang, 2001 .