D. Starikov

发表

Diode structures based on p-GaN for optoelectronic applications in the near-ultraviolet range of the spectrum

A. Tempez, N. Badi, D. Starikov, 2000 .

Compact fluorescence sensors based on III nitrides

D. Starikov, N. Medelci, A. Bensaoula, 2002, Proceedings of the Second Joint 24th Annual Conference and the Annual Fall Meeting of the Biomedical Engineering Society] [Engineering in Medicine and Biology.

Enhanced free carrier generation in boron nitride films by pulsed laser radiation

E. N. Loubnin, A. Tempez, S. Klimentov, 1999 .

InGaN devices for high temperature photovoltaic applications

R. Pillai, D. Starikov, A. Bensaoula, 2010, 2010 35th IEEE Photovoltaic Specialists Conference.

Field emission from as-grown and surface modified BN and CN thin films

E. N. Loubnin, A. Tempez, V. Frolov, 1999 .

Epitaxial growth of (111)-oriented ZrxTi1−xN thin films on c-plane Al2O3 substrates

R. Pillai, J. Gandhi, D. Starikov, 2014 .

Solar-Blind Dual-Band UV/IR Photodetectors Integrated on a Single Chip

R. Pillai, D. Starikov, A. Bensaoula, 2006, 2007 Cleantech Conference and Trade Show Cleantech 2007.

Neural Network Processor for a FPGA-based Multiband Fluorometer Device

M. Boukadoum, D. Starikov, A. Bensaoula, 2007, 2006 International Workshop on Computer Architecture for Machine Perception and Sensing.

Molecular beam epitaxy growth of InGaN-GaN superlattices for optoelectronic devicesa)

R. Pillai, D. Starikov, A. Bensaoula, 2011 .

Effect of N2* and N on GaN nanocolumns grown on Si(111) by molecular beam epitaxy

R. Pillai, J. Gandhi, M. Kesaria, 2016 .

Effect of N 2 and N on GaN nanocolumns grown on Si ( 111 ) by molecular beam epitaxy

R. Pillai, J. Gandhi, M. Kesaria, 2016 .

Enhancement of adhesive joint strength by laser surface modification

D. Starikov, A. Bensaoula, E. Baburaj, 2007 .

Formation of Core-Shell Nanoparticles by Laser Ablation of Copper and Brass in Liquids

V. Voronov, P. Kazakevich, G. Shafeev, 2005 .

Tunable TiO2 (anatase and rutile) materials manufactured by mechanical means

Francisco C. Robles Hernandez, Abdelhak Bensaoula, David Starikov, 2012 .

Growth and characterization of ingan for photovoltaic devices

R. Kudrawiec, Jan Misiewicz, R. Pillai, 2010, 2010 35th IEEE Photovoltaic Specialists Conference.

Fabrication and characterization of 2.3eV InGaN photovoltaic devices

D. Starikov, C. Boney, A. Bensaoula, 2008, 2008 33rd IEEE Photovoltaic Specialists Conference.

Optical radiation selective photodetectors based on III nitrides

R. Pillai, D. Starikov, A. Bensaoula, 2008 .

Arrays of 3D micro-columns generated by laser ablation of Ta and steel: modelling of a black body emitter

G. A. Shafeev, R. Pillai, A. V. Simakin, 2004 .

Hardened planar nitride based cold cathode electron emitter

R. Pillai, D. Starikov, C. Boney, 2012, OPTO.

Photoenhanced reactive ion etching of III–V nitrides in BCl3/Cl2/Ar/N2 plasmas

A. Tempez, N. Badi, D. Starikov, 1999 .

Gallium adlayer adsorption and desorption studies with real-time analysis by spectroscopic ellipsometry and RHEED on A-, M-, and C-plane GaN grown by PAMBE

P. Misra, D. Starikov, A. Bensaoula, 2009 .

Employment of III-nitride/silicon heterostructures for dual-band UV/IR photodiodes

R. Pillai, D. Starikov, C. Boney, 2009, OPTO.

Employment of III-nitride/silicon heterostructures for dual-band UV/IR photodiodes

R. Pillai, D. Starikov, C. Boney, 2009, OPTO.

Properties and modelling of InGaN for high temperature photovoltaics

R. Pillai, D. Starikov, A. Bensaoula, 2012, 2012 38th IEEE Photovoltaic Specialists Conference.

Etch characteristics of GaN and BN materials in chlorine-based plasmas

A. Tempez, N. Badi, D. Starikov, 2000 .

Experimental simulation of integrated optoelectronic sensors based on III nitrides

G. Fox, D. Starikov, J.-W. Um, 2002 .

Dual-band UV/IR optical sensors for fire and flame detection and target recognition

D. Starikov, C. Boney, A. Bensaoula, 2004, ISA/IEEE Sensors for Industry Conference, 2004. Proceedings the.

A portable multi-band optoelectronic system for identifying and measuring the concentration of fluorophore substances

M. Boukadoum, D. Starikov, A. Bensaoula, 2004, The 2nd Annual IEEE Northeast Workshop on Circuits and Systems, 2004. NEWCAS 2004..

Molecular beam epitaxy III-nitride growth for polarization sensitive devices based on M-plane films with in situ real time analysis by spectroscopic ellipsometry

R. Pillai, D. Starikov, A. Bensaoula, 2008 .

M-plane III-nitride materials for polarization sensitive devices grown by PAMBE with real time analysis by spectroscopic ellipsometry

R. Pillai, P. Misra, D. Starikov, 2008 .

Effect of N (cid:2) 2 and N on GaN nanocolumns grown on Si(111) by molecular beam epitaxy

R. Pillai, J. Gandhi, M. Kesaria, 2023 .

Spectral and surface analysis of heated micro-column arrays fabricated by laser-assisted surface modification

G. A. Shafeev, R. Pillai, A. V. Simakin, 2004 .

Boron carbon nitride materials for tribological and high temperature device applications

Seunghwan Lee, S. Perry, A. Tempez, 1998 .

Radio-frequency molecular-beam-epitaxy growth of III nitrides for microsensor applications

D. Starikov, I. Berishev, A. Bensaoula, 2001 .

An Efficient SIMD Architecture with Parallel Memory for 2D Cosine Transforms of Video Coding

M. Boukadoum, D. Starikov, Abdelhak Bensaoula, 2007 .