I. Berishev

Diode structures based on p-GaN for optoelectronic applications in the near-ultraviolet range of the spectrum

A. Tempez, N. Badi, D. Starikov, 2000 .

Visible emission from AlN doped with Eu and Tb ions

I. Brown, I. Berishev, A. Bensaoula, 2001 .

Visible emission from AlN doped with Eu, Tb, and Er ions

I. Brown, I. Berishev, A. Bensaoula, 2000, 2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498).

GaN thin film growth on GaAs (001) by CBE and plasma-assisted MBE

A. Tempez, I. Rusakova, E. Kim, 2002 .

Field emission properties of GaN films on Si(111)

I. Rusakova, M. Ugarov, I. Berishev, 1998 .

High growth rate GaN films using a modified electron cyclotron resonance plasma source

E. Kim, I. Berishev, A. Bensaoula, 1998 .

Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy

Robert F. Karlicek, R. F. Karlicek, Chuong A. Tran, 1999 .

Time of flight mass spectroscopy of recoiled ions studies of surface kinetics and growth peculiarities during gas source molecular beam epitaxy of GaN

I. Rusakova, K. Waters, E. Kim, 1999 .

In situ surface composition and structure of InGaN and GaN thin films by time-of-flight mass spectroscopy of recoiled ions

E. Kim, I. Berishev, A. Bensaoula, 1999 .

Photoenhanced reactive ion etching of III–V nitrides in BCl3/Cl2/Ar/N2 plasmas

A. Tempez, N. Badi, D. Starikov, 1999 .

Nucleation and growth of chemical beam epitaxy gallium nitride thin films

S. Perry, Seunghwan Lee, K. Waters, 1997 .

Etch characteristics of GaN and BN materials in chlorine-based plasmas

A. Tempez, N. Badi, D. Starikov, 2000 .

Mg doping studies of electron cyclotron resonance molecular beam epitaxy of GaN thin films

E. Kim, I. Berishev, A. Bensaoula, 1999 .

Radio-frequency molecular-beam-epitaxy growth of III nitrides for microsensor applications

D. Starikov, I. Berishev, A. Bensaoula, 2001 .