P. Ruden

发表

AlGaN/GaN heterostructure field-effect transistor model including thermal effects

Mario G. Ancona, John D. Albrecht, Steven C. Binari, 2000 .

Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy

Peter P. Chow, J. M. Van Hove, P. Chow, 1997 .

Fabrication and Characterization of GaN/AlGaN Ultraviolet-Band Heterojunction Photodiodes

Thomas E. Nohava, Wei Yang, Wei Yang, 1998 .

Optical properties of AlGaAs/GaAs nipi superlattices and their application in asymmetric cavity spatial light modulators

J. J. Liu, M. Hibbs-Brenner, P. Ruden, 1994 .

AlGaAs/InGaAs/GaAs quantum well doped channel heterostructure field effect transistors

M. Shur, D. Grider, A. Akinwande, 1990 .

Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistors with very high transconductance

M. Shur, D. Grider, R. Daniels, 1988, IEEE Electron Device Letters.

Anisotropy effects and optical excitation of acoustic phonons in n-i-p-i doping superlattices

G. Döhler, P. Ruden, 1983 .

High performance complementary logic based on GaAs/InGaAs/AlGaAs HIGFETs

A. I. Akinwande, D. Grider, J. Nohava, 1989, International Technical Digest on Electron Devices Meeting.

Modeling and simulation of doped channel heterostructure FETs and integrated circuits

M. Shur, D. Grider, R. Daniels, 1988, 1988., IEEE International Symposium on Circuits and Systems.

Modeling charge transport in quantum dot light emitting devices with NiO and ZnO transport layers and Si quantum dots

S. Campbell, B. Kumar, P. Ruden, 2013 .

Properties of n-i-p-i doping sljperlattices in III–V and IV–VI semiconductors

G. Döhler, P. Ruden, 1984 .

Electronic structure of semiconductors with doping superlattices

Gottfried H. Döhler, G. Döhler, P. Ruden, 1983 .

Optical Memory Elements Based on Hetero-nipi Superlattice Asymmetric Cavity Spatial Light Modulators

A. Sawchuk, M. Hibbs-Brenner, P. Ruden, 1993, Spatial Light Modulators and Applications.

Investigation of luminescence and non-linear optical properties of hetero n-i-p-i superlattices

Robert A. Street, P. P. Ruden, R. Street, 1986 .

Observation of Tunable Band Gap and Two-Dimensional Subbands in a Novel GaAs Superlattice

Gerhard Abstreiter, H. Kuenzel, Klaus H. Ploog, 1981 .

Spectrally agile far‐infrared detector using an n‐i‐p‐i superlattice

J. E. Carroll, P. Ruden, C. Marttila, 1989 .

Optical modulation of light transmission in GaAs doping superlattices

Mary K. Hibbs-Brenner, P. P. Ruden, John A. Lehman, 1989 .

LOW-POWER NON-LINEAR OPTICAL PHENOMENA IN DOPING SUPERLATTICES.

G. Döhler, P. Ruden, 1985 .

Time resolved luminescence in n-i-p-i doping superlattices

G. Döhler, K. Ploog, H. Künzel, 1983 .

Photoluminescence study of electron-hole recombination across the tunable effective gap in GaAs n-i-p-i superlattices

G. Döhler, K. Ploog, H. Stolz, 1982 .

Non-thermionic cathodes-solid state electron emitters based on GaN and LaB/sub 6/

R. Horning, A. Akinwande, J. King, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Short channel effects in submicron self-aligned gate heterostructure field effect transistors

Michael S. Shur, D. E. Grider, P. Joslyn, 1988, Technical Digest., International Electron Devices Meeting.

Theory of absorption in doping superlattices

G. Dohler, Gottfried H. Dohler, P. Ruden, 1984 .

Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistors

M. Shur, D. Grider, R. Daniels, 1989 .

Resonant tunneling transport at 300 K in GaAs‐AlGaAs quantum wells grown by metalorganic chemical vapor deposition

R. Kolbas, V. Sokolov, S. Ray, 1986 .