G. Soerensen

Smooth wet etching by ultraviolet-assisted photoetching and its application to the fabrication of AlGaN/GaN heterostructure field-effect transistors

J. B. Webb, Haipeng Tang, H. Maher, 2000 .

Wet etching and its application to the fabrication and characterization of AlGaN/GaN HFETs

J. B. Webb, H. Maher, C. Bolognesi, 2000, Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122).

Improved breakdown voltages in submicrometre planar GaAs MESFETs with a thin (Ga,ln)P surface layer

C. Bolognesi, S. Watkins, M. Dvorak, 1997 .

Atomic layer epitaxy of InAs using tertiarybutylarsine

R. Arès, S. Watkins, C. Tran, 1995 .

High-speed AlGaN/GaN HFETs fabricated by wet etching mesa isolation

Haipeng Tang, J. Bardwell, H. Maher, 2000 .

Preliminary results for GaInAs channel MISFETs fabricated on LEC-grown ternary GaInAs substrates

C. Bolognesi, S. Watkins, X. Xu, 1998, Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159).

MOVPE growth of single monolayers of InAs in GaAs studied by time-resolved reflectance difference spectroscopy

R. Arès, J. Gupta, S. Watkins, 1998 .

The oxygen isotope effect in Pr, Ca, and Zn substituted YBa2Cu3O7−δ and EuBa2Cu3O7−δ

J. P. Franck, E. Altshuler, G. Sproule, 1991 .

DECAY DATA ON SOME Xe, I, AND Te ISOTOPES

G. Soerensen, G. Rudstam, G. Andersson, 1964 .

Magnetic properties of YBa2Cu3O7-xpellets made at 100 kbar

J. P. Franck, G. Soerensen, J. Jung, 1991 .

Atomic force microscopy study of morphology and dislocation structure of InAs and GaSb grown on highly mismatched substrates

C. Bolognesi, R. Arès, S. Watkins, 1997 .

High mobility InAs grown on GaAs substrates using tertiarybutylarsine and trimethylindium

R. Arès, S. Watkins, C. Tran, 1995 .

Characterization of very high purity InAs grown using trimethylindium and tertiarybutylarsine

M. Thewalt, R. Arès, S. Watkins, 1995 .