I. Tsong

发表

Polarity determination and atomic arrangements at a GaN/SiC interface using high-resolution image matching

David Smith, Fernando Ponce, Jeffrey N. Stirman, 2000 .

LASERS, OPTICS, AND OPTOELECTRONICS 2865 Single-mode solid-state single photon source based on isolated quantum dots in pillar microcavities

Costas Fotakis, Eric Moreau, C. Kalpouzos, 2001 .

Novel synthetic pathways to wide bandgap semiconductors in the Si?C?Al?N system

David J. Smith, P. Crozier, A. Chizmeshya, 2002 .

Thermodynamic functions and phase diagrams of tantalum + hydrogen and tantalum + deuterium systems

J. Pryde, I. Tsong, 1971 .

Growth of self-assembled GaN quantum dots via the vapor-liquid-solid mechanism

David J. Smith, A. Bell, F. Ponce, 2002 .

Quantitative hydrogen depth-profiling using SIMS☆

P. Swann, T. Lundquist, I. Tsong, 1981 .

Investigation of hydrogen and chlorine at the SiO/sub 2//Si interface

A. Wintenberg, B. Appleton, C. D. Moak, 1980 .

The use of sputter-induced emission spectroscopy for the analysis of hydrogen in solids

I. Tsong, R. Liebert, 1978 .

Sputtering of ices by keV ions

J. W. Christiansen, I. Tsong, D. Carpini, 1986 .

Review: Sputtering mechanisms for amorphous and polycrystalline solids

D. J. Barber, I. Tsong, 1973 .

Experimentally derived hydration rates in obsidian dating

G. A. Smith, I. Tsong, J. Michels, 1983 .

Obsidian Hydration Dating: A Coming of Age

I. Tsong, J. Michels, 1980 .

Obsidian Hydration Profiles Measured by Sputter-Induced Optical Emission

W. White, R. Messier, I. Tsong, 1978, Science.

MEASUREMENT OF HYDROGEN PROFILES IN SiO2 BY A NUCLEAR REACTION TECHNIQUE

G. J. Clark, B. Appleton, C. White, 1978 .

Real-time monitoring of structure and stress evolution of boron films grown on Si(100) by ultrahigh vacuum chemical vapor deposition

E. Chason, J. Kouvetakis, S. Hearne, 1999 .

Mass distribution of ejected molecules and clusters in noncascade sputtering processes

B. King, S. Lin, I. Tsong, 1985 .

InGaN/GaN multiple-quantum-well light-emitting diodes grown on Si(111) substrates with ZrB2(0001) buffer layers

David J. Smith, J. Roberts, M. Crawford, 2012 .

Velocity distributions of sputtered excited potassium atoms

I. Tsong, V. Bissessur, 1990 .

Synthesis of Si-Ge nanoscale structures via deposition of single-source (GeH3)4−nSiHn hydrides

V. D'costa, P. Crozier, J. Tolle, 2005 .

Brittle-Ductile Relaxation Kinetics of Strained AlGaN/GaN

E. Chason, D. Follstaedt, Jung Han, 1999 .

Effect of nitridation on the growth of GaN on ZrB2(0001)∕Si(111) by molecular-beam epitaxy

J. Tolle, J. Kouvetakis, Zhi Wang, 2006 .

Field‐ion scanning tunneling microscopy study of the atomic structure of 6H–SiC(0001) surfaces cleaned by in situ Si molecular beam etching

Lian Li, Y. Hasegawa, I. Tsong, 1996 .

Elastic properties of nanocrystalline zirconium–silicon–boron thin films

B. Wilkens, David J. Smith, J. Tolle, 2001 .

Atomic-level characterization of cubic silicon carbide surfaces - A review

I. Tsong, 1993 .

Quantitative Aspects of Quter-Shell Excitation in Ion-Surface Collisions

I. Tsong, 1981 .

Velocity measurements of sputtered atoms in excited states

I. Tsong, N. A. Yusuf, 1980 .

Does local thermodynamic equilibrium exist in the excitation process of sputtered atoms

I. Tsong, N. A. Yusuf, 1979 .

Interpretation of the mass distribution of ejected (CsI)nCs+ ion clusters by the non-cascade sputtering model

B. King, S. Lin, I. Tsong, 1986 .

Low-energy electron microscopy observations of GaN homoepitaxy using a supersonic jet source

R. Doak, R. Davis, E. Bauer, 1999 .

Evidence for interdiffusion of hydronium and alkali ions in leached glasses

A. Wintenberg, W. White, I. Tsong, 1981 .

Sodium-hydrogen interdiffusion in sodium silicate glasses

W. Lanford, W. White, I. Tsong, 1980 .

Growth of SiCAlN on Si(111) via a crystalline oxide interface

P. Crozier, A. Chizmeshya, J. Tolle, 2002 .

Structural and optical properties of coherent GaN islands grown on 6H-SiC(0001)-(√3×√3)

David J. Smith, A. Bell, F. Ponce, 2003 .

Structural and morphological changes on surfaces with multiple phases studied by low-energy electron microscopy

T. Ogino, Y. Homma, H. Hibino, 2004 .

Surface morphology induced by Ga and Sn overlayers on Si (100) and Si (311) surfaces

Y. Wei, Lian Li, I. Tsong, 1995 .

Surface structure and morphology induced by ultrathin Ti films on 6HSiC(0001) and (0001̄)

Lian Li, I. Tsong, 1996 .

Synthesis and fundamental studies of (H3Ge)xSiH4-x molecules: precursors to semiconductor hetero- and nanostructures on Si.

D. Klewer, A. Chizmeshya, J. Tolle, 2005, Journal of the American Chemical Society.

Thermodynamic data and kinetics of evolution for dilute solution of hydrogen in tantalum

J. Pryde, I. Tsong, 1969 .

A theory of the resistivity of high-concentration interstitial alloys with application to the tantalum-hydrogen and tantalum-deuterium systems

J. Pryde, I. Tsong, 1971 .

Carbon on surfaces of magnesium oxide and olivine single crystals. Diffusion from the bulk or surface contamination?

G. W. Arnold, C. Magee, I. Tsong, 1985 .

The characterization of films deposited by chemical reaction on ferroelectric-ferroelastic gadolinium molybdate surfaces

A. S. Bhalla, A. Bhalla, I. Tsong, 1978 .

Impact collision ion scattering spectrometry studies of thin metal overlayers on Si(111) surfaces

T. Porter, C. S. Chang, I. Tsong, 1989 .

Surface and interface studies of GaN epitaxy on Si(111) via ZrB2 buffer layers

A. Chizmeshya, J. Tolle, J. Kouvetakis, 2005 .

Epitaxial growth of the pseudo-binary wide band gap semiconductor SiCAlN

C. Poweleit, David J. Smith, P. Crozier, 2003 .

Low-temperature growth of SiCalN films of high hardness on Si(111) substrates

David J. Smith, P. Crozier, J. Tolle, 2001 .

Low-temperature epitaxial growth of the quaternary wide band gap semiconductor SiCAlN.

C. Poweleit, P. Crozier, A. Chizmeshya, 2002, Physical review letters.

Temperature effects in atomic mixing of metal-silicon multilayers measured by SIMS

B. King, I. Tsong, D. Tonn, 1985 .

First-principles studies of GaN(0001) heteroepitaxy on Zr B 2 (0001)

A. Chizmeshya, J. Kouvetakis, Po-Liang Liu, 2005 .

The Effect of Atomic Mixing on the Depth Profiles of Metal Markers in Silicon

B. King, I. Tsong, J. Leavitt, 1983 .

Scanning tunneling microscopy of β-SiC and YBa2Cu3O7-x ceramic surfaces

W. Petuskey, J. Barry, I. Tsong, 1988 .

A model for atomic mixing and preferential sputtering effects in SIMS depth profiling

B. King, I. Tsong, 1984 .

Kinetic energies of excited atoms ejected from ion-bombarded surfaces☆

I. Tsong, N. A. Yusuf, 1981 .

Ion‐induced desorption of (H2O)nH+ ion clusters

J. W. Christiansen, S. Lin, I. Tsong, 1987 .

Stoichiometric and non-stoichiometric films in the Si–O–N system: mechanical, electrical, and dielectric properties

S. Dey, P. Crozier, J. Tolle, 2003 .

Photon Emission from Sputtered Particles during Ion Bombardment

I. Tsong, 1971, October 16.

Surface reconstructions induced by submonolayers of tin on Si(111)

J. L. Stevens, C. S. Chang, M. S. Worthington, 1992, Photonics West - Lasers and Applications in Science and Engineering.

Impact-collision ion-scattering spectrometry studies of the surface

C. S. Chang, I. Tsong, D. Cornelison, 1990 .

Atomic structures of 6HSiC (0001) and (0001̄) surfaces

Lian Li, I. Tsong, 1996 .

Scanning tunneling microscopy studies of niobium carbide (100) and (110) surfaces

R. Davis, P. Varga, M. Schmid, 1996 .

Impact-collision ion-scattering spectrometry studies of the VC0.8(111)-(8 × 1) surface

I. Tsong, M. Hammar, B. Steele, 1994 .

Energy distribution of Ni+ ions recoiled from a Ni(100) surface

T. Porter, C. S. Chang, I. Tsong, 1988 .

Prediction of ion-bombarded surface topographies using Frank's kinematic theory of crystal dissolution

D. J. Barber, F. Frank, I. Tsong, 1973 .

Deconvolution of atomic mixing effects from SIMS depth profiles

B. King, I. Tsong, 1985 .

Decay kinetics of two-dimensional islands and holes on Si(111) studied by low-energy electron microscopy

T. Ogino, H. Hibino, I. Tsong, 2001 .

Analytic correction of edge effects in ion‐beam sputtered depth profiles

D. W. Hoffman, I. Tsong, G. Power, 1980 .

4×1 reconstruction of indium deposited on vicinal Si(111) surfaces

J. L. Stevens, I. Tsong, M. Worthington, 1993 .

Outer-shell electronic processes in Ne+ collisions with a Ni(110) surface

J. Kraus, R. Kelly, N. Tolk, 1982 .

Studies of Surfaces of Materials Using Low Energy Ion Beams

I. Tsong, 1983, IEEE Transactions on Nuclear Science.

Depth-Profiling Studies of Glasses and Ceramics by Ion Beam Techniques

I. Tsong, 1983 .

Ion-beam depth-profiling studies of leached glasses

A. Wintenberg, W. White, I. Tsong, 1982 .

Hydrogen and chlorine detection at the SiO2/Si interface

A. Wintenberg, I. Tsong, M. Monkowski, 1981 .

A comparison of absolute yields of excited neutrals and positive ions from ion-bombarded surfaces

P. Williams, I. Tsong, S. Tsuji, 1980 .

Influence of 6H–SiC(0001) substrate surface morphology on the growth of AlN epitaxial layers

B. Wilkens, R. Doak, David J. Smith, 1999 .

The depth resolution of sputter profiling

B. King, I. Tsong, 1984 .

Edge-effects correction in depth profiles obtained by ion-beam sputtering

D. W. Hoffman, C. Magee, I. Tsong, 1980 .

Thermal decay of superheated7×7islands and supercooled “1×1” vacancy islands on Si(111)

Y. Watanabe, H. Hibino, I. Tsong, 2005 .

MORPHOLOGICAL CONTROL OF GaN BUFFER LAYERS GROWN BY MOLECULAR BEAM EPITAXY ON 6H–SiC(0001)

R. Doak, David J. Smith, I. Tsong, 2000 .

Imaging wurtzite GaN surfaces by molecular beam epitaxy-scanning tunneling microscopy

Y. Segawa, T. Ohno, S. Kuwano, 2000 .

Surface superstructures and optical properties of wurtzite GaN grown on 6H-SiC

Y. Segawa, K. Nakayama, S. Kuwano, 2001 .

Two-step preparation of 6H–SiC(0001) surface for epitaxial growth of GaN thin film

Y. Hasegawa, I. Tsong, Q. Xue, 1999 .

Electronic structures of polar and nonpolar GaN surfaces

O. Sankey, I. Tsong, M. Tsai, 2002 .

Selected energy epitaxial deposition of GaN and AlN on SiC(0001) using seeded supersonic free jets of NH3 in helium

B. Wilkens, R. Doak, David J. Smith, 1999 .

Excitation of molecules formed by ion bombardment of surfaces

D. A. Reed, I. Tsong, C. Loxton, 1984 .

The influence of oxygen on the continuum emission from ion-bombarded metal surfaces

S. Krishnaswamy, I. Tsong, S. Tsuji, 1981 .

Mechanisms of ion-induced desorption of large molecules and clusters

B. King, S. Lin, I. Tsong, 1987 .

Surface reconstructions induced by thin overlayers of indium on Si(111)

C. S. Chang, I. Tsong, D. Cornelison, 1990 .

An ion beam spectrochemical analyser with application to the analysis of silicate minerals

I. Tsong, A. McLaren, 1975 .

Sputter yields of ammonium chloride and solid glycerol

J. W. Christiansen, R. Cooks, G. Gillen, 1988 .

A straight domain boundary of single-atom width on a Si(111)-(7 × 7) surface

J. Dow, I. Tsong, M. Tsai, 1993 .

Boron reconstructed Si(111) surfaces produced by B2O3 decomposition

J. Nogami, P. Pianetta, M. Trenary, 1994 .

Comment on ``Step Faceting at the (001) Surface of Boron Doped Silicon''

E. Bauer, J. Pelz, I. Tsong, 1998 .

Oxygen etching of the Si(100)-(2 × 1) surface

Y. Wei, I. Tsong, Y. Hong, 1996 .

Controlled striped phase formation on ultraflat Si(001) surfaces during diborane exposure

J. Kouvetakis, H. Hibino, J. Pelz, 2001 .

Enhanced terrace stability for preparation of step-free Si(001)-(2 x 1) surfaces.

H. Hibino, J. Pelz, I. Tsong, 2001, Physical Review Letters.

Reconstruction, step-bunching and faceting of a vicinal Si( 100) surface induced by indium adsorption

W. Yi, I. Tsong, L. Lian, 1994 .

The structure of the Si(100)-(4 × 3) In surface studied by STM and ICISS

I. Tsong, D. Cornelison, L. Lian, 1994 .

Surface morphology of Si(111)‐(7×7) under an external isotropic tensile stress

Y. Wei, Lian Li, I. Tsong, 1995 .

Etching of Si(111)‐(7×7) and Si(100)‐(2×1) surfaces by atomic hydrogen

Lian Li, I. Tsong, Yi Wei, 1995 .

Optimum widths of dimer vacancy lines on Si(100)-(2×1)

Y. Wei, Y. Tsai, C. S. Chang, 1997 .

Control of Si(100) Sublimation with Dopants

C. Roland, I. Tsong, M. Wensell, 1997 .

Scanning tunneling microscopy of cubic silicon carbide surfaces

R. Davis, W. Petuskey, H. Kong, 1988 .

Si(111)-(√3<= √3<=)Ag surface structure studied by impact-collision ion-scattering spectrometry

T. Porter, C. S. Chang, I. Tsong, 1988 .

Comment on ''Molecule formation during sputtering by two-body associative ionization with diabatic curve crossing''

S. Lin, I. Tsong, C. Loxton, 1983 .

Stress evolution during metalorganic chemical vapor deposition of GaN

Jung Han, Hiroshi Amano, S. J. Hearne, 1999 .

Theoretical Studies of Non-Cascade Sputtering Processes

M. Szymoński, I. Tsong, C. Loxton, 1983 .

Glass leaching studies by sputter-induced photon spectrometry (SIPS)

W. White, I. Tsong, S. Tong, 1980 .

Scanning tunneling microscopy and spectroscopy of cubic β-SiC(111) surfaces

R. Davis, C. S. Chang, I. Tsong, 1991 .

Absolute photon yields in the sputter-induced optical emission process

I. Tsong, N. A. Yusuf, 1978 .

In situ spectrochemical analysis of solid surfaces by ion beam sputtering

C. White, N. Tolk, I. Tsong, 1977 .

Hydrogen and fluorine profiles in GdF3 films measured by sputter‐induced optical emission

A. Bhalla, I. Tsong, 1978 .

The excitation efficiency of atoms ejected during ion-beam sputtering

I. Tsong, 1977 .

The effect of adsorbed and recoil-implanted oxygen on sputtered excited atoms

I. Tsong, S. Tsuji, 1980 .

Hydrogen impurity in natural gem diamond

P. R. W. Hudson, I. Tsong, 1977 .

Development of the surface topography on silica glass due to ion-bombardment

D. J. Barber, I. S. T. Tsong, David J. Barber, 1972 .

Reply to “photon emission from sputtered atoms — The observation of apparent local thermodynamic equilibrium in the excitation” by R.J. MacDonald, R.F. Garrett and P.J. Martin

I. Tsong, 1978 .

CHARACTERIZATION OF LEACHED SURFACE LAYERS ON SIMULATED HIGH-LEVEL WASTE GLASSES BY SPUTTER-INDUCED OPTICAL EMISSION

W. White, I. Tsong, C. Houser, 1979 .

Optical characterization of Si1−xGex nanodots grown on Si substrates via ultrathin SiO2 buffer layers

C. Poweleit, J. Tolle, J. Kouvetakis, 2007 .

Synthesis of butane-like SiGe hydrides: enabling precursors for CVD of Ge-rich semiconductors.

A. Chizmeshya, J. Tolle, J. Kouvetakis, 2006, Journal of the American Chemical Society.

Low-temperature pathways to Ge-rich Si1−xGex alloys via single-source hydride chemistry

A. Chizmeshya, J. Tolle, J. Kouvetakis, 2005 .

Synthesis of highly coherent SiGe and Si4Ge nanostructures by molecular beam epitaxy of H3SiGeH3 and Ge(SiH3)4

M. Bauer, P. Crozier, J. Tolle, 2003 .

Quantification of hydrogen in a‐Si:H films by ir spectrometry, 15N nuclear reaction, and SIMS

W. Lanford, R. Ross, R. Messier, 1982 .

Obsidian Dating and East African Archeology

Charles M. Nelson, I. Tsong, J. Michels, 1983, Science.

GaN Stress Evolution During Metal-Organic Chemical Vapor Deposition

J. Han, H. Amano, E. Chason, 1998 .

Studies of β‐SiC (001) and (111) surfaces by scanning tunneling microscopy

R. Davis, Y. Wang, C. S. Chang, 1991 .

Hydrogen concentration profiles in quartz determined by a nuclear reaction technique

G. J. Clark, B. Appleton, C. White, 1978 .

Impact collision ion spectrometry studies of the NiSi2(111) surface

T. Porter, C. S. Chang, I. Tsong, 1990 .

Scanning tunneling microscopy of ion impacts on semiconductor surfaces

I. Tsong, U. Knipping, I. Wilson, 1989 .

AD-A 249 581 " SURFACE STRUCTURES AND SURFACE PROCESSES OF CERAMICS WITH ATOMIC RESOLUTION-A STUDY BY SCANNING TUNNELING MICROSCOPY DTIC '-FINAL

William, I. Tsong, Petuskey, 2022 .

Scanning tunneling microscopy of an ion‐bombarded PbS(001) surface

I. Tsong, U. Knipping, I. Wilson, 1988 .

Initial Stages of Cubic GaN Growth on the GaAs(001) Surface Studied by Scanning Tunneling Microscopy

Y. Hasegawa, I. Tsong, Q. Xue, 1997 .

In situ real-time studies of GaN growth on 6H-SiC(0 0 0 1) by low-energy electron microscopy (LEEM)

R. Doak, R. Feenstra, E. Bauer, 1998 .

Homoepitaxial GaN Layers Studied by Low‐Energy Electron Microscopy, Atomic Force Microscopy and Transmission Electron Microscopy

R. Doak, David J. Smith, R. Davis, 1999 .

Nucleation and growth of epitaxial ZrB2(0 0 0 1) on Si(1 1 1)

A. Chizmeshya, J. Tolle, J. Kouvetakis, 2004 .

ZrB2(0001)上,GaN(0001)ヘテロエピタクシーの第一原理研究

A. Chizmeshya, J. Kouvetakis, I. Tsong, 2005 .

Growth of AlN and GaN on 6H–SiC(0001) using a helium supersonic beam seeded with ammonia

R. Doak, David J. Smith, M. Stevens, 1997 .

Shadow cones formed by target atoms calculated for 1 to 3 keV H+, He+, Li+, Ne+ and Na+ ion bombardment

C. S. Chang, I. Tsong, U. Knipping, 1987 .

Ion‐beam‐induced desorption of Ar+n ion clusters

J. W. Christiansen, I. Tsong, S. Lin, 1988 .

Epitaxial film growth of zirconium diboride on Si(0 0 1)

A. Chizmeshya, J. Tolle, J. Kouvetakis, 2005 .

Scanning tunneling microscopy and spectroscopy of ion-bombarded Si(111) and Si(100) surfaces.

Zandvliet, Elswijk, E. Loenen, 1992, Physical review. B, Condensed matter.

Determination of hydrogen in silicates using the ion beam spectrochemical analyzer; application to hydrolytic weakening

B. Hobbs, I. Tsong, A. C. Mclaren, 1976 .

Quantitative Spectrochemical Analyses of Feldspars by Ion Bombardment

I. Tsong, A. Mclaren, I. S. T. TSONG, 1974, Nature.

SIMS analysis of thermal and ion-beam induced broadening of thin metal markers in silicon

O. Sankey, I. Tsong, D. Tonn, 1986 .

The influence of atomic mixing on SIMS depth profiling of thin buried layers

B. King, I. Tsong, 1983 .

Ion-beam-induced atomic mixing at the SiO2/Si interface

D. W. Hoffman, I. Tsong, J. Monkowski, 1981 .