J. V. Vechten

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Quantum Dielectric Theory of Electronegativity in Covalent Systems. III. Pressure-Temperature Phase Diagrams, Heats of Mixing, and Distribution Coefficients

J. A. Van Vechten, J. V. Vechten, J. A. Vechten, 1973 .

Dielectric Classification of Crystal Structures, Ionization Potentials, and Band Structures

J. C. Phillips, J. V. Vechten, J. A. Vechten, 1969 .

Microscopic Mechanisms of Growth of Dark Line Defects in Double Heterostructure Lasers

J. V. Vechten, 1975 .

Heats of formation of tetrahedrally coordinated semiconductors AMB8-M

J. V. Vechten, J. C. Philiips, J. A. Vechten, 1970 .

Reasons to believe pulsed laser annealing of Si does not involve simple thermal melting

R. Tsu, F. Saris, J. V. Vechten, 1979 .

Scaling Theory of Melting Temperatures of Covalent Crystals

J. V. Vechten, 1972 .

Atomic Diffusion With Strain and Injection

J. V. Vechten, J. A. Vechten, 1990 .

Nonthermal pulsed laser annealing of Si; plasma annealing

Raphael Tsu, J. A. Van Vechten, R. Tsu, 1979 .

17 – Physics of Transient Phenomena during Pulsed Laser Annealing and Sputtering

J. V. Vechten, J. A. Vechten, 1984 .

Coincidence of the thermal melting points of crystalline and amorphous Si and coincidence of thresholds for pulsed beam annealing of crystalline and amorphous Si and GaAs

J. V. Vechten, J. A. Vechten, 1982 .

EVIDENCE FOR AND NATURE OF A NONTHERMAL MECHANISM OF PULSED LASER ANNEALING OF Si

J. V. Vechten, J. A. Vechten, 1980 .

Threshold for Optically Induced Dislocation Glide in GaAs-AlGaAs Double Heterostructures: Degradation via a New Cooperative Phenomenon?

M. Small, B. Monemar, J. V. Vechten, 1978 .

New Set of Tetrahedral Covalent Radii

J. C. Phillips, J. Phillips, J. V. Vechten, 1970 .

Simple Theoretical Estimates of the Schottky Constants and Virtual‐Enthalpies of Single Vacancy Formation in Zinc‐Blende and Wurtzite Type Semiconductors

J. V. Vechten, J. A. Vechten, 1975 .

Encapsulation of radioactive noble gas waste in amorphous alloy

J. Cuomo, R. Gambino, J. V. Vechten, 1979 .

Nonlinear Optical Susceptibilities of Covalent Crystals

J. C. Phillips, J. Phillips, J. V. Vechten, 1969 .

Estimation of bond-bending force constants in tetrahedral semiconductors and their variation with pressure obtained from spectroscopic data

J. V. Vechten, J. A. Vechten, 1974 .

Simple Theoretical Estimates of the Enthalpy of Antistructure Pair Formation and Virtual‐Enthalpies of Isolated Antisite Defects in Zinc‐Blende and Wurtzite Type Semiconductors

J. V. Vechten, J. A. Vechten, 1975 .

Laser-Solid Interactions: Localization of Momentum and of Energy

J. V. Vechten, J. A. Vechten, 1983 .

Variation of semiconductor band gaps with lattice temperature and with carrier temperature when these are not equal

M. Wautelet, J. V. Vechten, J. A. Vechten, 1981 .

Temperature dependence of the mercury telluride‐cadmium telluride band offset

K. Malloy, J. V. Vechten, 1989 .

Nondestructive depth profiling of carrier lifetimes in full silicon wafers

J. S. Batchelder, D. Guidotti, J. V. Vechten, 1986 .

Enthalpy of vacancy migration in Si and Ge

J. V. Vechten, J. A. Vechten, 1974 .

Macroscopic Model of Formation of Vacancies in Semiconductors

J. C. Phillips, J. Phillips, J. V. Vechten, 1973 .

Effect of Disorder on the Conduction-Band Effective Mass, Valence-Band Spin-Orbit Splitting, and the Direct Band Gap in III-V Alloys

O. Berolo, J. Woolley, J. V. Vechten, 1973 .

Electronic Structures of Semiconductor Alloys

T. K. Bergstresser, J. V. Vechten, J. A. Vechten, 1970 .

Thermal expansion contributions to band-gap and band offset temperature dependencies

K. Malloy, J. V. Vechten, 1991 .

Confine Cu to Increase Cu-Chalcopyrite Solar Cell Voltage

J. V. Vechten, J. A. Vechten, 2006 .

Comparison of theory with quenching experiments for the entropy and enthalpy of vacancy formation in Si and Ge

C. D. Thurmond, J. A. Van Vechten, J. V. Vechten, 1976 .

Effect of reconstruction of a semiconductor surface on the crystal growth

J. V. Vechten, 1975 .

Divacancy binding enthalpy in semiconductors

J. V. Vechten, J. A. Vechten, 1975 .

Nonstoichiometry and nonradiative recombination in GaP

J. V. Vechten, J. A. Vechten, 1975 .

Entropy of ionization and temperature variation of ionization levels of defects in semiconductors

C. D. Thurmond, J. A. Van Vechten, J. V. Vechten, 1976 .

Surface reconstruction as a source of growth steps

J. V. Vechten, 1977 .

Plasma Annealing and Laser Sputtering; Role of the Frenkel Exciton

J. V. Vechten, J. A. Vechten, 1983 .

Comment on ‘‘Phase transformation on and charged particle emission from a Si crystal surface induced by ps laser pulses’’

J. V. Vechten, J. A. Vechten, 1982 .

Surface treatment effects on atomic diffusion in Si explained without self interstitials

J. V. Vechten, U. Schmid, Q.S. Zhang, 1991 .

Entropy of Atomic Hopping in Diffusion and Defect Transformations

J. Wager, J. V. Vechten, T. Dobson, 1988 .

Spectroscopic Analysis of Cohesive Energies and Heats of Formation of Tetrahedrally Coordinated Semiconductors

J. C. Phillips, James C. Phillips, J. A. Van Vechten, 1970 .

A comment on the ``characterization of swirl defects in floating zone Si crystals'' by P.M. Petroff and A.J.R. De Kock

J. W. Matthews, J. V. Vechten, J. A. Vechten, 1976 .

Theory for the Contributions of Noncentral Forces to the Second and Third Order Elastic Constants in Diamond, Zinc-Blende and Wurtzite Type Crystals

J. V. Vechten, 1974 .

Consequences of anion vacancy nearest‐neighbor hopping in III‐V compound semiconductors: Drift in InP metal‐insulator‐semiconductor field‐effect transistors

J. Wager, J. V. Vechten, J. A. Vechten, 1985 .

Point defects and deep traps in III–V compounds

J. V. Vechten, J. A. Vechten, 1980 .

Deviations from the one-defect approximation: antistructure in III-V compounds

J. V. Vechten, J. A. Vechten, 1984 .

Intermixing of an AlAs‐GaAs superlattice by Zn diffusion

J. V. Vechten, J. A. Vechten, 1982 .

Formation of interstitial-type dislocation loops in tetrahedral semiconductors by precipitation of vacancies

J. V. Vechten, 1978 .

Effect of reconstruction during epitaxial growth

J. V. Vechten, 1977 .

Effect of interfaces upon atomic diffusion: Si and Zn in GaAs

J. V. Vechten, J. A. Vechten, 1984 .

A simple man's view of the passivation of semiconductors

J. V. Vechten, J. A. Vechten, 1990 .

Mossbauer spectra and the DX-centre complex in AlGaAs

J. V. Vechten, J. A. Vechten, 1989 .

Atomic model for the EL0 defect in GaAs

J. Wager, J. V. Vechten, J. A. Vechten, 1987 .

Thermodynamics of Deep Levels in Semiconductor

J. V. Vechten, J. A. Vechten, 1985 .

VIDSIM - A Monte Carlo program for the simulation of atomic diffusion in diamond and zinc-blende structures

N. C. Myers, J. V. Vechten, U. Schmid, 1990 .

Experimental tests for boson condensation and superconductivity in semiconductors during pulsed beam annealing

J. V. Vechten, J. A. Vechten, 1981 .

Plasma annealing state of semiconductors; plasma condensation to a superconductivity- like state at 1000 K?

A. Compaan, J. V. Vechten, J. A. Vechten, 1981 .

Calculation of Local Effective Fields: Optical Spectrum of Diamond

R. Martin, J. V. Vechten, J. A. Vechten, 1972 .

Nonexistence of localized band tail states in substitutional semiconductor alloys and some other disordered systems

J. V. Vechten, J. A. Vechten, 1972 .

Charge Redistribution and Piezoelectric Constants

J. C. Phillips, J. V. Vechten, J. A. Vechten, 1969 .

Title : A 6 % Efficient MIS Particulate Silicon Solar Cell

J. V. Vechten, Michael Greer, 2012 .

Theoretical aspects of laser annealing

J. V. Vechten, J. A. Vechten, 1983 .

Franz-Keldysh contributions to third-order optical susceptibilities

David E. Aspnes, J. A. Van Vechten, D. Aspnes, 1969 .

Spin-Orbit Splitting in Compositionally Disordered Semiconductors

O. Berolo, J. Woolley, J. V. Vechten, 1972 .

Kinetic segregation of AlAs-GaAs during 〈110〉 MBE

J. V. Vechten, 1985 .

Effect of electron-hole pairs on phonon frequencies in Si related to temperature dependence of band gaps

V. Heine, J. V. Vechten, J. A. Vechten, 1976 .

Identification of M Centers in InP

J. Wager, J. V. Vechten, J. A. Vechten, 1985 .

Defeating Compensation in Wide Gap Semiconductors by Growing in H that is Removed by Low Temperature De-Ionizing Radiation

J. David Zook, Robert D. Horning, James A. Van Vechten, 1992 .

Semiconductor–metal phase transformation of tetrahedrally coordinated semiconductors

J. V. Vechten, J. A. Vechten, 1971 .