G. Stillman

发表

Effect of post-growth cooling ambient on acceptor passivation in carbon-doped GaAs grown by metalorganic chemical vapor deposition

A. W. Hanson, S. L. Jackson, S. A. Stockman, 1993 .

The gas source molecular beam epitaxial growth of AlxGa1−xP on (100) GaP

K. C. Hsieh, J. N. Baillargeon, K. Cheng, 1990 .

Carbon-doped HBTs for OEICs

D. A. Ahmari, S. L. Jackson, M. Feng, 1995, Proceedings of 4th International Conference on Solid-State and IC Technology.

High‐efficiency silicon doping of InP and In0.53Ga0.47As in gas source and metalorganic molecular beam epitaxy using silicon tetrabromide

S. L. Jackson, M. Fresina, J. Baker, 1994 .

Silicon doping of InP, GaAs, In/sub 0.53/Ga/sub 0.47/As and In/sub 0.49/Ga/sub 0.51/P grown by gas source and metalorganic molecular beam epitaxy using a SiBr/sub 4/ vapor source

D. A. Ahmari, S. L. Jackson, M. Fresina, 1994, Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM).

Semi-insulating InP grown with a CCl/sub 4/ doping source

Q. Hartmann, N. Gardner, S. A. Stockman, 1996, Proceedings of Semiconducting and Semi-Insulating Materials Conference.

GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates

A. P. Curtis, W. I. Wang, S. Chuang, 1997 .

Semi-insulating CCl/sub 4/-doped InP grown at low temperature by LP-MOCVD

Q. Hartmann, N. Gardner, S. A. Stockman, 1994, Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM).

Growth and characterization of n-type GaAs/AlGaAs quantum well infrared photodetector on GaAs-on-Si substrate

A. P. Curtis, W. I. Wang, I. Bloom, 1998 .

Research on nonlinear optical materials: an assessment.

R R Neurgaonkar, H M Gibbs, P. W. Smith, 1987, Applied optics.

Optimization of interfaces in arsenide-phosphide compounds grown by gas source molecular-beam epitaxy

S. G. Bishop, S. L. Jackson, A. Chen, 1993 .

III. Multiple-quantum wells.

Philip Smith, R. Burnham, H. Gibbs, 1987, Applied optics.

High gain AlGaAs/GaAs HBTs grown by MOCVD

G. Stillman, N. Pan, D. Vu, 1998, Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors.

Effects of annealing on the performance of InP/lnGaAs HBTs grown by LP-MOCVD

D. Barlage, J. Baker, G. Stillman, 1997, Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials.

Passivation of carbon acceptors during growth of carbon-doped GaAs, InGaAs, and HBTs by MOCVD

K. Hsieh, A. Hanson, G. Stillman, 1992 .

Minority carrier transport in carbon doped gallium arsenide

S. A. Stockman, G. Stillman, C. Colomb, 1992 .

Absence of 13C incorporation in 13CCl4‐doped InP grown by metalorganic chemical vapor deposition

Brian T. Cunningham, S. A. Stockman, Stephen A. Stockman, 1990 .

Zero‐field time‐of‐flight characterization of minority‐carrier transport in heavily carbon‐doped GaAs

D. Mars, N. Gardner, S. A. Stockman, 1993 .

Carbon Doping of InGaAs for Device Applications

M. Fresina, S. A. Stockman, A. Hanson, 1993 .

Carbon tetrachloride doped AlxGa1−xAs grown by metalorganic chemical vapor deposition

Brian T. Cunningham, Judith E. Baker, G. E. Stillman, 1990 .

Effect of Substrate Misorientation on the Structual Strain and Defect Distribution of Mocvd Grown GaAs on Si

R. Kaliski, D. McIntyre, M. Feng, 1988 .

Carbon doping of In/sub x/Ga/sub 1-x/As by MOCVD using CCl/sub 4/

S. A. Stockman, A. Hanson, G. Stillman, 1992, LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels.

Hydrogenation and subsequent hydrogen annealing of GaAs on Si

N. Holonyak, C. Ito, M. Feng, 1989 .

Characterization of heavily carbon‐doped GaAs grown by metalorganic chemical vapor deposition and metalorganic molecular beam epitaxy

K. Hsieh, J. Baillargeon, K. Cheng, 1992 .

Effects of thermally grown native oxides on the luminescence properties of compound semiconductors

M. R. Islam, R. Dupuis, G. Stillman, 1996 .

LOW-TEMPERATURE PHOTOLUMINESCENCE STUDY ON ER-DOPED GAP GROWN BY ORGANOMETALLIC VAPOR PHASE EPITAXY

Y. Fujiwara, Y. Takeda, G. Stillman, 1998 .

Layer intermixing and related long-term instability in heavily carbon-doped AlGaAs/GaAs superlattices

Brian T. Cunningham, Louis J. Guido, Nick Holonyak, 1991 .

Al‐Ga interdiffusion in heavily carbon‐doped AlxGa1−xAs‐GaAs quantum well heterostructures

Brian T. Cunningham, A. R. Sugg, Louis J. Guido, 1990 .

Semi-insulating In0.49Ga0.51P grown at reduced substrate temperature by low-pressure metalorganic chemical vapor deposition

D. A. Ahmari, M. Fresina, Q. Hartmann, 1997 .

Investigation of the thermal dissociation of PH3 and NH3 using quadrupole mass spectrometry

S. L. Jackson, J. Baillargeon, K. Cheng, 1991 .

Research on nonlinear optical materials: an assessment.

P. S. Brody, R. Burnham, H. Gibbs, 1987, Applied optics.