C. Hwang

发表

High Quality P‐Type GaN Deposition on c‐Sapphire Substrates in a Multiwafer Rotating‐Disk Reactor

S. Pearton, Yicheng Lu, R. Kolbas, 1995 .

Investigation of n‐ and p‐type doping of GaN during epitaxial growth in a mass production scale multiwafer‐rotating‐disk reactor

S. Pearton, Yicheng Lu, R. Kolbas, 1995 .

Effect of structural defects and chemical impurities on hall mobilities in low pressure MOCVD grown GaN

M. Schurman, R. Stall, Y. Lu, 1997 .

Elemental vapor transport epitaxy of II-VI semiconductors

G. Tompa, Yicheng Lu, A. Gurary, 1993 .

Effect of substrate pretreatment on growth of GaN on (0001) sapphire by low pressure metalorganic chemical vapor deposition

Yicheng Lu, M. Schurman, R. Stall, 1995 .

Structural properties of GaN grown by MOVPE turbodisc mass-production reactor

I. Ferguson, A. Thompson, M. Schurman, 1997 .

The Role of Impurities in LP-MOCVD Grown Gallium Nitride

Yicheng Lu, M. Schurman, R. Stall, 1995 .

Characterization of Gallium Nitride Grown on (0001) Sapphire by Plasma-Enhanced Atomic Layer Epitaxy

C. Hwang, W. Mayo, P. Lu, 1993 .

Photoluminescence and Sims Studies of Hydrogen Passivation of Mg-Doped P-Type Gallium Nitride

M. Wraback, M. Schurman, R. Stall, 1995 .

Growth of MnS, Cd 1-x Mn x Se, and MnS 1-x Se x Films by Molecular Beam Epitaxy (MBE) and Elemental Vapor Transport Epitaxy (EVTE) Techniques

G. Tompa, Yicheng Lu, A. Gurary, 1993 .