E. Carlson

发表

M. J. Kim, R. Davis, R. Carpenter, 1995 .

Diluent Gas Effects on Properties of Ain and GaN Thin Films Grown by Metalorganic Vapor Phase Epitaxy on α(6H)-SiC Substrates

R. Davis, P. Hartlieb, C. Wolden, 1997 .

Pendeo-Epitaxy - A New Approach for Lateral Growth of Gallium Nitride Structures

Scott A. Smith, T. Gehrke, R. Davis, 1998 .

Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE

P. Fay, R. McCarthy, C. Youtsey, 2019, Materials.

Characterization of Be-Implanted GaN Annealed at High Temperatures

T. Gehrke, R. Davis, K. Linthicum, 1999 .

Characterization of Be-Implanted GaN Annealed at High Temperatures

T. Gehrke, R. Davis, K. Linthicum, 1998 .

Electrical characterization of RuOx/n-GaN Schottky diodes formed by oxidizing ruthenium thin-films in normal laboratory air

N. Allen, A. Chakraborty, L. Guido, 2020 .

Ion implantation of epitaxial GaN films: damage, doping and activation

R. Davis, J. Hunn, N. Parikh, 1997 .

Pendeo-epitaxial growth of GaN on SiC and silicon substrates via metalorganic chemical vapor deposition

M. Mehregany, C. Zorman, T. Gehrke, 1999 .

Process Routes for Low Defect-Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques

M. Mehregany, C. Zorman, T. Gehrke, 1998 .

Growth and Characterization of GaN and AL x GA 1−x N Thin Films Achieved Via Lateral- and/or Pendeo-Epitaxial Overgrowth on 6H-SIC(0001) Substrates

T. Gehrke, R. Davis, K. Linthicum, 1998 .

Photoluminescence characterization of Mg implanted GaN

T. Gehrke, R. Davis, P. Hartlieb, 1999 .

Scaling of Chlorosilane SiC CVD to Multi-Wafer Epitaxy System

M. Loboda, G. Chung, M. MacMillan, 2007 .

Homoepitaxial Growth of 4H-SiC Using a Chlorosilane Silicon Precursor

M. Loboda, G. Chung, M. MacMillan, 2006 .

Characterization of inhomogeneous Ni/GaN Schottky diode with a modified log-normal distribution of barrier heights

N. Allen, L. Guido, E. Carlson, 2019, Semiconductor Science and Technology.

X-ray and Raman analyses of GaN produced by ultrahigh-rate magnetron sputter epitaxy

J. Muth, J. Maria, R. Nemanich, 2002 .

X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms

R. Davis, R. Nemanich, S. King, 1999 .

Pendeoepitaxy of gallium nitride thin films

Robert F. Davis, Darren B. Thomson, Dale Batchelor, 1999 .

GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high‐temperature monocrystalline AlN buffer layers

Robert F. Davis, Michael D. Bremser, R. Davis, 1995 .

Undoped and doped GaN thin films deposited on high-temperature monocrystalline AlN buffer layers on vicinal and on-axis α(6H)-SiC(0001) substrates via organometallic vapor phase epitaxy

N. El-Masry, R. Davis, E. Piner, 1996 .

A New Method of Mapping and Counting Micropipes in SiC Wafers

M. Loboda, G. Chung, Seung-ho Park, 2006 .

Optical activation of Be implanted into GaN

R. Davis, C. Ronning, D. Thomson, 1998 .

Recent advances in the growth, doping and characterization of III–V nitride thin films

R. Davis, Satoru Tanaka, R. S. Kern, 1996 .

Defect Reduction in SiC Growth Using Physical Vapor Transport

Jie Zhang, M. Loboda, G. Chung, 2010 .

4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer

Jie Zhang, M. Loboda, G. Chung, 2011 .

Growth of Crystalline Silicon Carbide by CVD Using Chlorosilane Gases

Y. Makarov, M. Loboda, G. Chung, 2006 .

Optical characterization of high quality GaN produced by high rate magnetron sputter epitaxy

J. Muth, R. Nemanich, R. Kolbas, 2002 .

Wafer‐scale epitaxial lift‐off of GaN using bandgap‐selective photoenhanced wet etching

Patrick Fay, Kamran Forghani, Andy Xie, 2017 .