E. Konenkova

发表

Solvent effect on the properties of sulfur passivated GaAs

M. Lebedev, V. Bessolov, E. Konenkova, 1996 .

Sulfidization of GaAs in alcoholic solutions: a method having an impact on efficiency and stability of passivation

M. Lebedev, V. Bessolov, E. Konenkova, 1997 .

Modification of GaAs(1 0 0) and GaN(0 0 0 1) surfaces by treatment in alcoholic sulfide solutions

E. Konenkova, 2002 .

Sulfide passivation of III-V semiconductor surfaces: role of the sulfur ionic charge and of the reaction potential of the solution

M. Lebedev, V. Bessolov, E. Konenkova, 1998 .

Semipolar GaN(10–11) Epitaxial Layer Prepared on Nano‐Patterned SiC/Si(100) Template

S. Kukushkin, V. Smirnov, D. Kibalov, 2018, physica status solidi (b).

Plastic Relaxation of Stressed Semipolar AlN($$10\bar {1}1$$) Layer Synthesized on a Nanopatterned Si(100) Substrate

V. Bessolov, E. Konenkova, V. Panteleev, 2020 .

Synthesis of Hexagonal AlN and GaN Layers on a Si(100) Substrate by Chloride Vapor-Phase Epitaxy

E. V. Gushchina, M. Shcheglov, V. Bessolov, 2019, Technical Physics.

Photoluminescence of Fs-GaN Treated in Alcoholic Sulfide Solutions

M. Kompan, E. Konenkova, Y. Zhilyaev, 1998 .

Aluminum and gallium nitrides on a silicon substrate with an intermediate silicon carbide nanolayer for ultraviolet devices

A. V. Osipov, S. Kukushkin, M. Shcheglov, 2011 .

SEMIPOLAR GALLIUM NITRIDE ON SILICON: TECHNOLOGY AND PROPERTIES

A. Ioffe, S. Kukushkin, V. Bessolov, 2014 .

Vapor-Phase Epitaxy of AlN Layers on AlN/Si(111) Templates Synthesized by Reactive Magnetron Sputtering

M. Kompan, M. Shcheglov, V. Bessolov, 2020 .

Hydride Vapor-Phase Epitaxy of a Semipolar AlN(10$$\bar {1}$$2) Layer on a Nanostructured Si(100) Substrate

M. Kompan, V. Bessolov, E. Konenkova, 2020 .

Epitaxy of GaN(0001) and GaN(10$$\bar {1}$$1) Layers on Si(100) Substrate

M. Kompan, M. Shcheglov, V. Bessolov, 2019, Technical Physics Letters.

GaN films grown by vapor-phase epitaxy in a hydride-chloride system on Si(111) substrates with AlN buffer sublayers

V. Yu. Davydov, Masayoshi Koike, M. Koike, 2005 .

Raman spectroscopy of GaN nucleation and free-standing layers grown by hydride vapor phase epitaxy on oxidized silicon

D. Zahn, E. Konenkova, Y. Zhilyaev, 2003 .

Initial Stages of Growth of Semipolar AlN on a Nanopatterned Si(100) Substrate

V. Bessolov, E. Konenkova, S. N. Rodin, 2021, Semiconductors.

Semipolar GaN Layers Grown on Nanostructured Si(100) Substrate

M. Shcheglov, V. Bessolov, E. Konenkova, 2018, Technical Physics Letters.

Semipolar AlN and GaN on Si(100): HVPE technology and layer properties

S. Kukushkin, V. Bessolov, E. Konenkova, 2017 .

Metal-insulator transition in graphite: A comparison to heterostructures with high carrier mobility

R. Wiesendanger, D. Grundler, M. Morgenstern, 2008 .

Misfit dislocation locking and rotation during gallium nitride growth on SiC/Si substrates

S. Kukushkin, E. Konenkova, V. Panteleev, 2017 .

Semipolar AlN on Si(100)

S. Kukushkin, V. Bessolov, E. Konenkova, 2017 .

Chloride vapor-phase epitaxy of gallium nitride on silicon: Effect of a silicon carbide interlayer

S. Kukushkin, M. Kompan, M. Shcheglov, 2008 .

Chemical effects during formation of the electronic surface structure of III–V semiconductors in a sulfide solution

D. Zahn, M. Lebedev, E. Konenkova, 1999 .

Sulfide passivation of GaAs power diodes

E. Konenkova, V. M. Botnaryuk, Y. Zhilyaev, 1999 .

Hexagonal AlN Layers Grown on Sulfided Si(100) Substrate

E. V. Gushchina, M. Shcheglov, V. Bessolov, 2018 .

Pendeo-epitaxy of stress-free AlN layer on a profiled SiC/Si substrate

A. Lipovskii, D. Karpov, S. Kukushkin, 2016 .

Raman scattering from LO–phonon–plasmon coupled modes in Ag-coated GaN nanocrystals

D. Zahn, V. Bessolov, E. Konenkova, 2004 .

Semipolar III-N Layers Deposited on a Nanostructured Silicon Substrate: Process and Luminescence Specificity

V. Bessolov, E. Konenkova, V. Panteleev, 2022, Bulletin of the Russian Academy of Sciences: Physics.

Anisotropic Stresses in GaN(11‒20) Layers on an r-Al2O3 Substrate during Hydride Vapor Phase Epitaxy

V. Bessolov, E. Konenkova, V. Panteleev, 2022, Semiconductors (Woodbury, N.Y.).

Properties of Semipolar GaN Grown on a Si(100) Substrate

V. Smirnov, D. Kibalov, M. Shcheglov, 2019, Semiconductors.

The growth of hexagonal and cubic GaN on a nano-patterned Si(100) substrate

V. Bessolov, E. Konenkova, S. Konenkov, 2020, Journal of Physics: Conference Series.

Properties of Semipolar GaN Grown on a Si(100) Substrate

D. Kibalov, M. Shcheglov, V. Bessolov, 2019, Semiconductors.

Chloride vapor-phase epitaxy of gallium nitride on silicon: Structural and luminescent characteristics of epilayers

M. Koike, M. Shcheglov, V. Bessolov, 2006 .

Aluminum nitride on silicon: Role of silicon carbide interlayer and chloride vapor-phase epitaxy technology

S. Kukushkin, M. Shcheglov, L. Sorokin, 2010 .

Misfit dislocation locking and rotation during gallium nitride growth on SiC/Si substrates

S. Kukushkin, V. Bessolov, E. Konenkova, 2017, Physics of the Solid State.

Initial stages of the GaN growth on oxidized silicon

S. Kukushkin, V. Bessolov, E. Konenkova, 2001 .