A. Schmitz

发表

Dry etching of GaN using chemically assisted Ion beam etching with HCI and H2/Cl2

I. Adesida, A. Ping, M. Asif Khan, 1996 .

High temperature characteristics of Pd Schottky contacts on n-type GaN

Ilesanmi Adesida, M. Asif Khan, M. Khan, 1996 .

Metal contacts to n-type GaN

Ilesanmi Adesida, M. Asif Khan, M. Khan, 1998 .

On the characterisation of antisite defects and ordering in off-stoichiometric Fe 2 VAl-based Heusler compounds by X-ray anomalous diffraction

P. Jacques, A. Schmitz, C. V. D. Rest, 2018 .

Elastic anisotropy and the substitutional bainite formation in copper base alloys

M. Chandrasekaran, G. Ghosh, L. Delaey, 1989 .

Schottky barrier properties of various metals on n-type GaN

M. Khan, I. Adesida, J. Yang, 1996 .

Characterization of reactive ion etching-induced damage to n-GaN surfaces using schottky diodes

M. Khan, I. Adesida, J. Yang, 1997 .