T. Lim

High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN

M. Nathan, M. Khan, Q. Chen, 1996 .

On the optical properties of some layer compounds

P. Lee, T. Lim, G. Said, 1969 .

CHARACTERIZATION OF THE INVERTED GA0.52IN0.48P/GAAS (001) JUNCTIONS USING CURRENT-VOLTAGE AND CAPACITANCE-VOLTAGE MEASUREMENTS

C. Cai, M. Nathan, T. Lim, 1999 .

New Findings and Interpretation on Atmospheric Adsorption Induced Instability in Microcrystalline Silicon Films

Hyuk-Ryeol Park, T. Lim, 2014 .

Characterization of interface charge at Ga0.52In0.48P/GaAs junctions using current–voltage and capacitance–voltage measurements

M. Nathan, T. Miller, T. Lim, 1996 .

Effect of ethanolamine passivation of ZnO nanoparticles in quantum dot light emitting diode structure

Bong Hoon Kim, M. Shim, Seong‐Yong Cho, 2019, Current Applied Physics.