J. Nishio

发表

Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates

Masayuki Ishikawa, Masahiro Yamamoto, Kazuhiko Itaya, 1996 .

Epitaxial Overgrowth of 4H-SiC for Devices with p-Buried Floating Junction Structure

K. Kojima, H. Okumura, T. Shinohe, 2005 .

Theoretical analysis for the segregation in the liquid encapsulated Czochralski system

H. Fujimoto, J. Nishio, 1994 .

Direct confirmation of structural differences in single Shockley stacking faults expanding from different origins in 4H-SiC PiN diodes

R. Iijima, Aoi Okada, J. Nishio, 2020 .

Informative Aspects of Molten KOH Etch Pits Formed at Basal Plane Dislocations on the Surface of 4H‐SiC

R. Iijima, Aoi Okada, J. Nishio, 2020, physica status solidi (a).

Triangular Single Shockley Stacking Fault Analyses on 4H-SiC PiN Diode with Forward Voltage Degradation

M. Kushibe, Aoi Okada, J. Nishio, 2020, Journal of Electronic Materials.

Photoluminescence Analysis of Individual Partial Dislocations in 4H-SiC Epilayers

M. Kushibe, Aoi Okada, J. Nishio, 2019 .

Dependences of contraction/expansion of stacking faults on temperature and current density in 4H-SiC p–i–n diodes

R. Iijima, H. Okumura, T. Shinohe, 2018 .

Fabrication of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs) and their Electrical Properties

H. Ohashi, T. Hatakeyama, K. Kojima, 2006 .

Homoepitaxial growth and investigation of stacking faults of 4H-SiC C-face epitaxial layers with a 1° off-angle

K. Kojima, H. Okumura, H. Asamizu, 2015 .

Origin and Generation Process of a Triangular Single Shockley Stacking Fault Expanding from the Surface Side in 4H-SiC PIN Diodes

R. Iijima, Aoi Okada, J. Nishio, 2021, Journal of Electronic Materials.

Native point defects in low‐temperature‐grown GaAs

Eicke R. Weber, W. Walukiewicz, Z. Liliental-Weber, 1995 .

Magnetic field effect on residual impurity concentrations for LEC GaAs crystal growth

J. Nishio, K. Terashima, Masayuki Watanabe, 1987 .

Doping characteristics and electrical properties of Mg-doped AlGaN grown by atmospheric-pressure MOCVD

Masaaki Onomura, C. Hongo, M. Onomura, 1998 .

Ambient gas constituents and segregation of carbon and boron in LEC GaAs single crystals: the role of water in boric oxide encapsulants

J. Nishio, H. Fujita, 1993 .

Transport restriction effect for gaseous components on the carbon content of LEC GaAs

J. Nishio, 1991 .

Gas phase contribution to carbon incorporation and extraction mechanisms for LEC GaAs

J. Nishio, Y. Nakata, 1990 .

Influence of melt preparation on residual impurity concentration in semi-insulating LEC GaAs

J. Nishio, K. Terashima, 1989 .

Precise melt composition control for LEC GaAs

J. Nishio, K. Terashima, 1987 .

Stoichiometry of undoped LEC GaAs

A. Okada, J. Nishio, K. Terashima, 1986 .

Vacuum bakeout effect on ambient gas in a high pressure LEC puller

J. Nishio, 1992 .

Scatterings of Shallow Threshold Voltage on Si-Implanted WN Self-Alignment Gate GaAs Metal-Semiconductor Field-Effect Transistors on Different Composition 2-Inch Substrates by Growing in Three Kinds of Furnaces

N. Uchitomi, C. Nozaki, Y. Kitaura, 1991 .

p-type conduction in as-grown Mg-doped GaN grown by metalorganic chemical vapor deposition

J. Nishio, L. Sugiura, Mariko Suzuki, 1998 .

Characteristics of Mg-Doped GaN and AlGaN Grown by H2-Ambient and N2-Ambient Metalorganic Chemical Vapor Deposition

M. Ishikawa, K. Itaya, J. Nishio, 1998 .

Effects of thermal treatment of low-temperature GaN buffer layers on the quality of subsequent GaN layers

Kazuhiko Itaya, Yoshihiro Kokubun, Hidetoshi Fujimoto, 1997 .

Origin of Double-Rhombic Single Shockley Stacking Faults in 4H-SiC Epitaxial Layers

R. Iijima, J. Nishio, C. Ota, 2022, Journal of Electronic Materials.

Contribution of 90° Si-Core Partial Dislocation to Asymmetric Double-Rhombic Single Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers

R. Iijima, J. Nishio, C. Ota, 2023, Journal of Electronic Materials.

Transmission Electron Microscopy Study of Single Shockley Stacking Faults in 4H-SiC Expanded from Basal Plane Dislocation Segments Accompanied by Threading Edge Dislocations on both Ends

R. Iijima, J. Nishio, C. Ota, 2022, Materials Science Forum.

Structural study of single Shockley stacking faults terminated near substrate/epilayer interface in 4H-SiC

R. Iijima, J. Nishio, C. Ota, 2021, Japanese Journal of Applied Physics.

Single Shockley stacking fault expansion from immobile basal plane dislocations in 4H-SiC

R. Iijima, Aoi Okada, J. Nishio, 2020, Japanese Journal of Applied Physics.

Epitaxial Growth of High-Quality 4H-SiC Carbon-Face by Low-Pressure Hot-Wall Chemical Vapor Deposition

K. Kojima, K. Arai, J. Nishio, 2003 .

Simulation, Fabrication and Characterization of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)

H. Ohashi, T. Hatakeyama, K. Kojima, 2007 .

The Role of Point Defects in Non-Stoichiometric III-V Compounds

E. Weber, H. Fujioka, J. Nishio, 1995 .

Reduction of incorporation of B, Al, Ti and N in 4H-SiC epitaxial-layer grown by chemical vapor deposition at higher growth temperature

Tetsuo Takahashi, K. Arai, M. Kushibe, 2001 .

Uniformity of 4H–SiC epitaxial layers grown on 3-in diameter substrates

K. Kojima, Tetsuo Takahashi, Y. Ishida, 2003 .

Carrier Lifetimes in 4H-SiC Epitaxial Layers on the C-Face Enhanced by Carbon Implantation

R. Iijima, S. Harada, H. Kitai, 2018, Materials Science Forum.

Suppression of short step bunching generated on 4H–SiC Si-face substrates with vicinal off-angle

S. Ito, K. Kojima, H. Okumura, 2014 .

Influence of stacking faults on the performance of 4H–SiC Schottky barrier diodes fabricated on (112̄0) face

K. Kojima, N. Ohtani, M. Katsuno, 2002 .

Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction

K. Fukuda, J. Senzaki, K. Kojima, 2002 .

C-Face Epitaxial Growth of 4H-SiC on Quasi-150-mm Diameter Wafers with High Throughput

K. Kojima, J. Nishio, K. Masumoto, 2014 .

Reduction of background carrier concentration and lifetime improvement for 4H-SiC C-face epitaxial growth

H. Kitai, K. Kojima, H. Asamizu, 2017 .

High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor

K. Kojima, Tetsuo Takahashi, Y. Ishida, 2002 .

Uniformity Improvement in Carrier Concentration on 150 mm Diameter C-Face Epitaxial Growth of 4H-SiC

S. Ito, K. Kojima, H. Asamizu, 2015 .

Stacking Fault Expansion from an Interfacial Dislocation in a 4H-SiC PIN Diode and Its Expansion Process

R. Iijima, Aoi Okada, J. Nishio, 2023, Journal of Electronic Materials.

Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle

K. Kojima, H. Okumura, H. Asamizu, 2014, Materials.

Homo-Epitaxial Growth on 2° Off-Cut 4H-SiC(0001) Si-Face Substrates Using H2-SiH4-C3H8 CVD System

K. Kojima, J. Nishio, K. Masumoto, 2014 .

Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor

Tetsuo Takahashi, Y. Ishida, K. Arai, 2002 .

VF Degradation of 4H-SiC PiN Diodes Using Low-BPD Wafers

K. Takao, T. Shinohe, J. Nishio, 2014 .

Doping Concentration Optimization for Ultra-Low-Loss 4H-SiC Floating Junction Schottky Barrier Diode (Super-SBD)

K. Takao, H. Ohashi, T. Hatakeyama, 2009 .

Conversion of Shockley partial dislocation pairs from unexpandable to expandable combinations after epitaxial growth of 4H-SiC

R. Iijima, J. Nishio, J. Nishio, 2021, Journal of Applied Physics.

Influence of Epi-Layer Growth Pits on SiC Device Characteristics

K. Kojima, H. Asamizu, Kazutoshi Kojima, 2015 .

Growth of silicon carbide epitaxial layers on 150-mm-diameter wafers using a horizontal hot-wall chemical vapor deposition

S. Ito, K. Kojima, H. Okumura, 2013 .

Dependence of 4H-SiC Epitaxial Layer Quality on Growth Conditions with Wafer Size Corresponding to 150 mm

K. Kojima, T. Aigo, W. Ito, 2012 .

Initiation of Shockley Stacking Fault Expansion in 4H-SiC P-i-N Diodes

R. Iijima, H. Okumura, Tomohisa Kato, 2019, Materials Science Forum.

Phase field model of single Shockley stacking fault expansion in 4H-SiC PiN diode

Y. Shibutani, K. Hirohata, Aoi Okada, 2021 .

Dynamics Analysis of Single Shockley Stacking Fault Expansion in 4H-SiC P-i-N Diode Based on Free Energy

K. Hirohata, Aoi Okada, A. Goryu, 2019, Materials Science Forum.

Evaluation of Effect of Mechanical Stress on Stacking Fault Expansion in 4H-SiC P-i-N Diode

K. Hirohata, S. Izumi, Aoi Okada, 2019, Materials Science Forum.

Band-gap separation in InGaN epilayers grown by metalorganic chemical vapor deposition

S. Chichibu, M. Arita, K. Itaya, 1998 .

Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition

K. Kojima, Tetsuo Takahashi, Y. Ishida, 2002 .