S. Donovan

发表

Low bias dry etching of III-nitrides in Cl2-based inductively coupled plasmas

S. Pearton, C. Abernathy, C. Vartuli, 1998 .

Selective inductively coupled plasma etching of group-III nitrides in Cl2- and BCl3-based plasmas

Luke F. Lester, R. J. Shul, Stephen J. Pearton, 1998 .

Comparison of inductively coupled plasma Cl2 and Cl4/H2 etching of III-nitrides

S. Pearton, C. Abernathy, C. Vartuli, 1998 .

Incorporation and Optical Activation of Er in Group III-N Materials Grown by Metalorganic Molecular Beam Epitaxy

F. Ren, S. Pearton, C. Abernathy, 1997 .

High-density plasma etch selectivity for the III–V nitrides

C. G. Willison, S. Pearton, J. Lee, 1998 .

High resolution pattern transfer in III-nitrides using BCl3/Ar inductively coupled plasmas

S. Pearton, J. Han, C. Abernathy, 1998 .

MBE Growth of Oxides for III–N MOSFETs

F. Ren, J. Han, C. Abernathy, 1999 .

Comparison of ICl- and IBr-based plasma chemistries for inductively coupled plasma etching of GaN, InN and AlN

S. Pearton, J. Han, C. Abernathy, 1999 .

Inductively Coupled Plasma Etching of III-Nitrides in Cl(2)/Xe,Cl(2)/Ar and Cl(2)/He

S. Pearton, C. Abernathy, R. Shul, 1999 .

Cl2-based dry etching of the AlGaInN system in inductively coupled plasmas

S. Pearton, J. Han, C. Abernathy, 1998 .

Inductively Coupled Plasma Etching of III-Nitrides in Cl 2 /Xe, Cl 2 /Ar AND Cl 2 /He

S. Pearton, C. Abernathy, R. Shul, 1998 .

Cl{sub 2}-based dry etching of the AlGaInN system in inductively coupled plasmas

S. Pearton, J. Han, C. Abernathy, 1997 .

Comparison of GaN, InN and AlN powders for susceptor-based rapid annealing of group III nitride materials

J. Zolper, S. Pearton, J. Lee, 1997 .

Growth of group III nitrides by metalorganic molecular beam epitaxy

C. Abernathy, S. Donovan, J. MacKenzie, 1997 .

Surface Chemical Treatment for the Cleaning of AlN and GaN Surfaces

Brent P. Gila, R. G. Wilson, C. R. Abernathy, 2000 .

Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

Albert G. Baca, S. J. Pearton, R. J. Shul, 1999 .

p-Ohmic contact resistance for GaAs(C)/GaN(Mg)

C. R. Abernathy, F. Ren, S. Pearton, 2000 .

Thermal stability of OHMIC contacts to InN

F. Ren, S. Pearton, C. Abernathy, 1998 .

InN-based Ohmic contacts to InAlN

F. Ren, S. Pearton, C. Abernathy, 1997 .

InN-Based Ohmic Contacts to AlInN

F. Ren, S. Pearton, C. Abernathy, 1996 .

GaN/AlGaN HBT fabrication

Albert G. Baca, R. F. Kopf, R. J. Shul, 2000 .

Effect of additive noble gases in chlorine-based inductively coupled plasma etching of GaN, InN, and AlN

R. J. Shul, Stephen J. Pearton, Hyun Cho, 1999 .

Properties of gel-silica optical matrices with 4.5-nm and 9.0-nm pores

Larry L. Hench, G. P. LaTorre, S. Donovan, 1992, Optics & Photonics.

Effect of BCl3 Dry Etching on InAlN Surface Properties

C. R. Abernathy, F. Ren, S. Pearton, 1996 .

The role of ion characteristics in determining the structural and electrical quality of InN grown by metalorganic molecular beam epitaxy

C. R. Abernathy, P. Chow, J. V. Hove, 1997 .

The Role of the In Source IN InN Growth from Molecular Beams

C. Abernathy, B. Gila, R. Wilson, 1998 .

Substrate Effects on the Growth of InN

F. Ren, S. Pearton, P. Holloway, 1997 .

Optical and structural studies of compositional inhomogeneity in strain-relaxed indium gallium nitride films

M. J. Reed, J. Woicik, J. Armstrong, 2000, 2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498).

Plasma characteristics and the growth of group III-nitrides by metalorganic molecular beam epitaxy

C. R. Abernathy, P. Chow, J. V. Hove, 1997 .

UV-photoassisted etching of GaN in KOH

S. Pearton, J. Han, C. Abernathy, 1999 .