M. Hara

发表

AlN/GaN insulated gate heterostructure FET with regrown n+GaN ohmic contact

S. Imanaga, H. Kawai, F. Nakamura, 1998 .

High quality SiO/sub 2//Si interfaces of poly-crystalline silicon thin film transistors by annealing in wet atmosphere

T. Sameshima, A. Kohno, M. Hara, 1995, IEEE Electron Device Letters.

Reduction of defects in laser‐induced crystallized and amorphized silicon films using plasma hydrogenation

T. Sameshima, A. Kohno, M. Hara, 1994 .

SiO2 formation by thermal evaporation of SiO in oxygen atmosphere used to fabrication of high performance polycrystalline silicon thin film transistors

T. Sameshima, A. Kohno, M. Hara, 1994 .

Observation of Laser-Induced Melting of Silicon Film Followed by Amorphization

T. Sameshima, S. Usui, M. Hara, 1990 .

XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TFT's

Masaki Hara, Toshiyuki Sameshima, T. Sameshima, 1989 .

High performance poly-Si TFTs fabricated using pulsed laser annealing and remote plasma CVD with low temperature processing

Masaki Hara, Toshiyuki Sameshima, Atsushi Kohno, 1995 .

Improvement of SiO2/Si interface by low‐temperature annealing in wet atmosphere

Naoki Sano, Masaki Hara, Toshiyuki Sameshima, 1995 .

Measuring the Temperature of a Quartz Substrate during and after the Pulsed Laser-Induced Crystallization of a-Si:H

Masaki Hara, Toshiyuki Sameshima, T. Sameshima, 1989 .

High performance poly-crystalline silicon thin film transistors fabricated using remote plasma chemical vapor deposition of SiO/sub 2/

T. Sameshima, A. Kohno, M. Hara, 1994, IEEE Electron Device Letters.

High mobility bottom gate nanocrystalline-Si thin-film transistors

M. Hara, 2011 .

AlN and AlGaN growth using low-pressure metalorganic chemical vapor deposition

M. Ikeda, S. Hashimoto, H. Kawai, 1998 .

Carrier Transport in Polycrystalline and Amorphous Silicon Thin Film Transistors

T. Sameshima, A. Kohno, M. Hara, 1994 .