B. Fu

Measurement of SiGe composition in 3-D semiconductor Fin Field Effect Transistor devices

W. Zhao, M. Gribelyuk, B. Fu, 2019, Journal of Applied Physics.

How to Avoid Artifacts in Nanobeam Diffraction Strain Measurements

F. Baumann, M. Gribelyuk, B. Fu, 2017, Microscopy and Microanalysis.

3D analysis of semiconductor devices: A combination of 3D imaging and 3D elemental analysis

M. Gribelyuk, B. Fu, 2018 .

Characterization of VLSI Processing Defects Using STEM-EELS Tomography

F. Baumann, B. Fu, Bryan N. Rhoads, 2016, Microscopy and Microanalysis.

Effects of high in-situ source/drain boron doping in p-FinFETs on physical and device performance characteristics

V. Kolagunta, B. Fu, S. Shintri, 2018, Materials Science in Semiconductor Processing.