J. Haruyama

发表

Kink effect related to the self-side-gating effect in GaAs MESFET's

J. Haruyama, Y. Ohno, Y. Nashimoto, 1994 .

Optoelectronic properties of laser-beam-patterned few-layer lateral MoS2 Schottky junctions

S. Katsumoto, J. Haruyama, S. Maruyama, 2020 .

Effect of Nitrogen Doping and Oxygen Vacancy on the Oxygen Reduction Reaction on the Tetragonal Zirconia(101) Surface

O. Sugino, S. Kasamatsu, J. Haruyama, 2022, The Journal of Physical Chemistry C.

Thermodynamic Analysis of Li-Intercalated Graphite by First-Principles Calculations with Vibrational and Configurational Contributions

K. Sodeyama, K. Shimoda, I. Watanabe, 2021, The Journal of Physical Chemistry C.

Edge-derived magnetisms in very thin non-doped Bi2Te3 nanomesh

S. Katsumoto, J. Haruyama, Taizou Kobayashi, 2019, Applied Physics Letters.

First-principles electronic structure investigation of HgBa2Can−1CunO2n+2+x with the SCAN density functional

O. Sugino, J. Haruyama, Alpin N. Tatan, 2022, AIP Advances.

Impact ionization in GaAs metal–semiconductor field‐effect transistors with a lightly doped drain structure and an Al0.2Ga0.8As/GaAs heterobuffer layer

J. Haruyama, Humiaki Katano, 1995 .

Photoemissions related to the kink effect in GaAs metal‐semiconductor field‐effect transistors with an Al0.2Ga0.8As/GaAs buffer layer

Y. Nashimoto, J. Haruyama, N. Goto, 1993 .

Gate pulse frequency‐dependent kink effects in GaAs metal‐semiconductor field‐effect‐transistors with a low‐temperature‐grown buffer layer

H. Negishi, J. Haruyama, Jun Haruyama, 1995 .

Theoretical calculation and comparison of H diffusion on Cu(111), Ni(111), Pd(111), and Au(111)

O. Sugino, J. Haruyama, Y. Kataoka, 2023, Physical review B.