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The inversion layer of subhalf-micrometer n- and p-channel MOSFET's in the temperature range 208-403 K

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Fabrication and electrical characteristics of carbon nanotube-based microcathodes for use in a parallel electron-beam lithography system

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Fabrication and electrical characteristics of carbon nanotube-based microcathodes for use in a parallel electron-beam lithography system

G. Amaratunga, W. Milne, H. Ahmed, 2003 .