H. Wagemann

发表

The inversion layer of subhalf-micrometer n- and p-channel MOSFET's in the temperature range 208-403 K

W. Windbracke, H. G. Wagemann, H. Bernt, 1993 .

Investigation and modeling the surface mobility of MOSFETs from -25 to +150 degrees C

H. Wagemann, W. Soppa, W. M. Soppa, 1988 .

A two-dimensional model for polycrystalline silicon solar cells

M. Böhm, H. Scheer, H. Wagemann, 1984 .

Application of a Linear Scaling Factor for Modeling I-V-Characteristics of Submicron MOSFETs with Channel Lengths down to 0.4 μm

H.-J. Wildau, H. Wagemann, F. Scheidemantel, 1991, ESSDERC '91: 21st European Solid State Device Research Conference.

Minority carrier behavior in silicon—Measurement results derived from the Shockley-Haynes experiment

H. Wagemann, T. Friese, B. Kruger, 1996 .

Absorption coefficient of silicon: An assessment of measurements and the simulation of temperature variation

K. Bücher, H. Wagemann, J. Bruns, 1994 .

Determination of the volume diffusion length of minority carriers within the base region of mono-crystalline solar cells by means of transient measurements

H. Wagemann, R. Kern, 1989 .

Nonequilibrium behavior of depletion, inversion, and accumulation grain boundaries

H. Scheer, H. Wagemann, M. Bohm, 1984, IEEE Transactions on Electron Devices.

Characterization of grain boudaries in silicon solar cells

W. Seifert, M. Böhm, H. Scheer, 1987 .

LBIC characterization of twin boundaries in tricrystalline silicon solar cells

P. Wawer, S. Irmscher, H. Wagemann, 1997, Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997.

Unambiguous distinction between diffusion length and surface recombination velocity of solar cells at different excitation levels

P. Wawer, M. Rochel, H. Wagemann, 1999 .

Monolithic series-interconnection for a thin film silicon solar cell

H. Wagemann, U. Kerst, M. Nell, 2001 .

Irradiation test and preselection of maverick diodes for the project symphonie satellite

J. C. Roncin, H. G. Wagemann, A. Spencker, 1973 .

Simulation and Analysis of the Bias Dependent Spectral Response of a-Si:H Pin Solar Cells

S. Gall, H. Wagemann, J. Bruns, 1991 .

Design and Measurement of Antireflection Coatings for AlGaAs/GaAs Solar Cells

H. Wagemann, D. Lin, H. Eschrich, 1991 .

Experiments and model of nonequilibrium behavior of MIS varactors using the linear ramp technique

D. Braunig, H. Wagemann, 1974 .

Effect of surface topology of amorphous substrates on the growth mechanism and grain size of APCVD grown silicon for solar cells

H. Wagemann, T. Kautzsch, A. Braun, 2000 .

Annealing of Hot-Carrier-Induced MOSFET Degradation

R. Mahnkopf, G. Przyrembel, H. Wagemann, 1988, ESSDERC '88: 18th European Solid State Device Research Conference.