W. Windbracke

发表

The inversion layer of subhalf-micrometer n- and p-channel MOSFET's in the temperature range 208-403 K

W. Windbracke, H. G. Wagemann, H. Bernt, 1993 .

Stress modification and characterization of thin SiC films grown by plasma-enhanced chemical vapour deposition

P. Lange, L. Csepregi, L. Buchmann, 1992 .

Characterization of thermal and deposited thin oxide layers by longitudinal optical-transverse optical excitation in fourier transform IR transmission measurements☆

P. Lange, W. Windbracke, 1989 .

Thermal Annealing Effects on the Mechanical Properties of Plasma‐Enhanced Chemical Vapor Deposited Silicon Oxide Films

W. Windbracke, P. Lange, U. Schnakenberg, 1992 .

Electrical and Structural Properties of Ultrathin SiO2 Gate Dielectrics Prepared Under Various Conditions

W. Windbracke, P. Lange, H. Bernt, 1992 .

Microcoils fabricated by UV depth lithography and galvanoplating

B. Löchel, A. Maciossek, M. Rothe, 1996 .

Critical dimension control in X-ray masks with electroplated gold absorbers

H. Huber, H. Betz, S. Pongratz, 1986 .

Application of pulse plating to form lead absorber patterns for X-ray masks

H. Huber, B. Löchel, W. Windbracke, 1989 .

Silicon X-ray masks: pattern placement and overlay accuracy

H. Huber, H. Betz, S. Pongratz, 1986 .