S.‐H. Yang

Accurate and efficient two-dimensional modeling of boron implantation into single-crystal silicon

A. Tasch, K. Klein, C. Park, 1991, International Electron Devices Meeting 1991 [Technical Digest].

Improved efficiency in Monte Carlo simulation of ion implanted impurity profiles in single-crystal materials

A. Tasch, S.‐H. Yang, D. Lim, 1995 .

The effect of dose rate on ion implanted impurity profiles in silicon

C. Magee, B. Freer, A. Tasch, 1996 .

Comparisons of UT-MARLOWE predictions of implant-induced damage with experimentally measured amorphous layer thicknesses

B. Obradovic, A. Tasch, S.‐H. Yang, 1996, Proceedings of 11th International Conference on Ion Implantation Technology.

An examination of the effect of dose rate on ion implanted impurity profiles in silicon

C. Magee, B. Freer, A. Tasch, 1995 .

Monte Carlo simulation of arsenic ion implantation in (100) single-crystal silicon

S. J. Morris, S. Tian, Al F. Tasch, 1996 .

A two-dimensional B implantation model for semiconductor process simulation environments

A. Tasch, Changhae Park, K. Klein, 1993 .