H. Kawata

Lateral spread of P+ ions implanted in silicon through the SiO2 mask window

T. Hisatsugu, T. Furuya, T. Sakurai, 1979 .

A high-transconductance self-aligned GaAs MESFET fabricated by through-AIN implantation

N. Yokoyama, H. Nishi, H. Kawata, 1984, IEEE Transactions on Electron Devices.

A planar InP/InGaAsP heterostructure avalanche photodiode

H. Kawata, T. Shirai, S. Yamazaki, 1982, IEEE Transactions on Electron Devices.

Experimental study of the orientation effect of GaAs MESFETs fabricated on

N. Yokoyama, T. Futatsugi, H. Nishi, 1989 .

High-transconductance self aligned GaAs MESFET using implantation through an AlN layer

N. Yokoyama, H. Nishi, H. Kawata, 1984 .