A. Willoughby

发表

A comparison between SIMS and spreading resistance profiles for ion implanted arsenic and boron after heat treatments in an inert ambient

M. Dowsett, D. Godfrey, R. Groves, 1985 .

The lattice larameter of GaAs and InP with reference to interfaces

J. Mullin, B. Straughan, A. Willoughby, 1975 .

Lattice superdilation phenomena in doped GaAs

J. Mullin, B. Straughan, A. Willoughby, 1976 .

A study of non-stoichiometry in gallium arsenide by precision lattice parameter measurements

A. Willoughby, C. Driscoll, B. Bellamy, 1971 .

Observation of Misfit Dislocation Strain‐Induced Surface Features for a Si/Ge–Si Heterostructure Using Total Reflection X‐Ray Topography

A. Danilewsky, P. McNally, J. Bonar, 2000 .

A photoluminescence study of defects in non-stoichiometric gallium arsenide using concurrent electrical and structural characterization

E. W. Williams, A. Willoughby, C. Driscoll, 1974 .

Suppression of boron diffusion due to carbon during rapid thermal annealing of SiGe based device materials—some comments

P. Ashburn, J. Bonar, A. Willoughby, 2006 .