C. Petit

发表

Comparison of the generated oxide charge by injection of electrons for both polarities

G. Reimbold, M. Jourdain, A. El-Hdiy, 1995 .

Si–SiO2 barrier height and its temperature dependence in metal-oxide-semiconductor structures with ultrathin gate oxide

G. Salace, T. Maurel, O. Simonetti, 2002 .

Gate pulse electrical method to characterize hysteresis phenomena in organic field effect transistor

Dominique Vuillaume, C. Petit, D. Zander, 2008 .

Low voltage and temperature effects on SILC in stressed ultrathin oxide films

M. Jourdain, D. Zander, A. Meinertzhagen, 2001 .

Anode hole injection and stress induced leakage current decay in metal-oxide-semiconductor capacitors

M. Jourdain, F. Mondon, A. Meinertzhagen, 2000 .

On the decay of the trapped holes and the slow states in metal–oxide–semiconductor capacitors

M. Jourdain, G. Salace, A. Meinertzhagen, 1996 .

On the positive charge and interface states in metal‐oxide‐semiconductor capacitors

M. Jourdain, A. Meinertzhagen, G. Yard, 1996 .

Inelastic tunneling spectra of an alkyl self-assembled monolayer using a MOS tunnel junction as a test-bed

D. Vuillaume, G. Salace, S. Lenfant, 2005 .

Electronic properties of organic monolayers and molecular devices

D. Vuillaume, C. Delerue, G. Salace, 2006, Electronic Device Architectures for the Nano-CMOS Era.

The no-thermal activation of the defect generation mechanism in a MOS structure

M. Jourdain, A. El-Hdiy, G. Salace, 1995 .

Comparison of the charges generated by Fowler-Nordheim tunneling injection in different oxides of metal-oxide-semiconductor capacitors

M. Jourdain, F. Mondon, A. Meinertzhagen, 1997 .

Low voltage stress-induced leakage current and traps in ultrathin oxide (1.2–2.5 nm) after constant voltage stresses

D. Zander, C. Petit, 2007 .

Organic field effect transistor based on a novel soluble pentacene precursor and operating at low voltages

D. Vuillaume, D. Zander, S. Lenfant, 2005 .

Inelastic electron tunneling spectrometer to characterize metal–oxide–semiconductor devices with ultrathin oxides

G. Salace, C. Petit, 2003 .

Irradiation effects on the high field behaviour of very thin silica layers

G. Salace, A. Aassime, G. Sarrabayrouse, 1997 .

On the frequency loss of metal-oxide—semiconductor structures under depletion and weak inversion

S. Elrharbi, M. Jourdain, A. Meinertzhagen, 1995 .

High-Energy Heavy Ion Irradiation-Induced Structural Modifications: A Potential Physical Understanding of Latent Defects

E. Lorfèvre, F. Wrobel, F. Saigné, 2008, IEEE Transactions on Nuclear Science.

Optical properties of VO2 thin films in their dielectric and metallic states

Christophe Petit, Jean Marc Frigerio, J. Frigerio, 1999, Optical Systems Design.

Inelastic electron tunneling spectroscopy: Capabilities and limitations in metal–oxide–semiconductor devices

D. Vuillaume, G. Salace, C. Petit, 2002 .

Hysteresis of the metal-insulator transition of ; evidence of the influence of microscopic texturation

Jean-Marc Frigerio, J. Frigerio, M. Goldmann, 1999 .

Inelastic electron tunnelling spectroscopy in N-MOS junctions with ultra-thin gate oxide

D. Vuillaume, G. Salace, C. Petit, 2003 .

Aluminum, oxide, and silicon phonons by inelastic electron tunneling spectroscopy on metal-oxide-semiconductor tunnel junctions: Accurate determination and effect of electrical stress

D. Vuillaume, G. Salace, C. Petit, 2004 .

Influence of ionizing radiation on the conduction properties of ultra-thin silica layers

G. Salace, G. Sarrabayrouse, C. Petit, 1994 .

Study of defects induced by high-electric-field stress into a thin gate oxide (11 nm) of metal-oxide-semiconductor capacitors

Dominique Vuillaume, C. Petit, M. Jourdain, 1993 .

Low voltage stress induced leakage currents and surface states in ultrathin (1.2–2.5 nm) oxides

T. Maurel, C. Petit, D. Zander, 2002 .

Temperature dependence of the electron affinity difference between Si and SiO2 in polysilicon (n+)–oxide–silicon (p) structures: Effect of the oxide thickness

C. Petit, M. Jourdain, M. Jourdain, 1999 .

On the relaxation of field induced oxide charge in metal-oxide-semiconductor capacitors

M. Jourdain, A. Meinertzhagen, C. Petit, 1994 .

Contribution of Latent Defects Induced by High-Energy Heavy Ion Irradiation on the Gate Oxide Breakdown

E. Lorfèvre, F. Wrobel, F. Saigné, 2009, IEEE Transactions on Nuclear Science.

Fowler–Nordheim conduction in polysilicon (n+)-oxide–silicon (p) structures: Limit of the classical treatment in the barrier height determination

G. Salace, A. Hadjadj, C. Petit, 2001 .

Relaxation of interface states and positive charge in thin gate oxide after Fowler–Nordheim stress

C. Petit, A. El Hdiy, A. Meinertzhagen, 1993 .

On positive charge annihilation and stress-induced leakage current decrease

C. Petit, A. Meinertzhagen, M. Jourdain, 1999 .