C. Dragon

High performance silicon LDMOS technology for 2 GHz RF power amplifier applications

A. Wood, C. Dragon, W. Burger, 1996, International Electron Devices Meeting. Technical Digest.

Delivering the power for upcoming wideband high-capacity base stations that will provide the punch for high bit-rate information systems

C. Dragon, W. Burger, B. Davidson, 2022 .

RF-LDMOS: a device technology for high power RF infrastructure applications

C. Dragon, W. Burger, B. Pryor, 2004, IEEE Compound Semiconductor Integrated Circuit Symposium, 2004..

A silicon MOS process for integrated RF power amplifiers

N. Camilleri, Julio Costa, Christopher P. Dragon, 1996, IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers.

High efficiency LDMOS power FET for low voltage wireless communications

C. Dragon, W. Burger, G. Ma, 1996, International Electron Devices Meeting. Technical Digest.

120 Watt, 2GHz, Si LDMOS RF POWER TRANSISTOR FOR PCS BASE

C. Dragon, Alan Wood, Warren Brakensiek, 1998 .