R. Jos

发表

RF power silicon-on-glass VDMOSFETs

A. Griffo, S.J.C.H. Theeuwen, V. Cuoco, 2004, IEEE Electron Device Letters.

High Channel Mobility 4H-SiC MOSFETs

H. Zirath, P. Nilsson, H. Ólafsson, 2006 .

Linearization study of a highly efficient CMOS-GaN RF pulse width modulation based transmitter

C. Fager, C. M. Andersson, M. Acar, 2012, 2012 42nd European Microwave Conference.

Reverse Schottky gate current in AlGaN-GaN high-electron-mobility-transistors

R. Jos, 2012 .

High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material

M. Syväjärvi, R. Yakimova, P. Nilsson, 2005 .

A semi-analytical, two-dimensional model for AlGaN/GaN high-electron-mobility-transistor Schottky currents at high reverse voltages

R. Jos, 2013 .

High Field Effect Mobility in 6H-SiC MOSFET with Gate Oxides Grown in Alumina Environment

H. Ólafsson, E. Sveinbjörnsson, R. Jos, 2005 .

Design and Fabrication of 4H-SiC RF MOSFETs

H. Zirath, P. Nilsson, K. Andersson, 2007, IEEE Transactions on Electron Devices.

A Generalized Combiner Synthesis Technique for Class-E Outphasing Transmitters

Christian Fager, Mustafa Ozen, Mark P. van der Heijden, 2017, IEEE Transactions on Circuits and Systems I: Regular Papers.

A strong reduction in the density of near-interface traps at the SiO2∕4H‐SiC interface by sodium enhanced oxidation

H. Ólafsson, E. Sveinbjörnsson, R. Jos, 2007 .

Sodium Enhanced Oxidation of Si-Face 4H-SiC: A Method to Remove Near Interface Traps

H. Ólafsson, E. Sveinbjörnsson, R. Jos, 2007 .

High field-effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material

H. Zirath, P. Nilsson, H. Ólafsson, 2005, IEEE Electron Device Letters.

SiC Varactors for Dynamic Load Modulation of High Power Amplifiers

C. Fager, M. Sudow, N. Rorsman, 2008, IEEE Electron Device Letters.

Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminium Ion-Implanted Material

P. Nilsson, H. Ólafsson, E. Sveinbjörnsson, 2005 .

High efficiency RF pulse width modulation with tunable load network class-E PA

Christian Fager, Mattias Thorsell, Kristoffer Andersson, 2011, WAMICON 2011 Conference Proceedings.

Formation of Deep Traps at the 4H-SiC/SiO2 Interface when Utilizing Sodium Enhanced Oxidation

E. Sveinbjörnsson, R. Jos, T. Rödle, 2007 .

High field effect mobility in Si face 4H-SiC MOSFET transistors

H. Zirath, H. Ólafsson, E. Sveinbjörnsson, 2004 .