S. Ochi

Thermal stability and secondary breakdown in planar power MOSFET's

M. Nagata, I. Yoshida, M. Katsueda, 1980, IEEE Transactions on Electron Devices.

1/f Noise Characteristics of Bipolar Transistors and Reduction of 1/f Noise by Clean Fabrication Process

H. Higuchi, S. Ochi, Shuuichi Nakamura, 1990 .

Computer analysis of breakdown mechanism in planar power MOSFET's

I. Yoshida, M. Nagata, T. Okabe, 1980, IEEE Transactions on Electron Devices.

A High Power MOS-FET with a Vertical Drain Electrode and Meshed Gate Structure

I. Yoshida, M. Kubo, S. Ochi, 1975, International Electron Devices Meeting.