R. Mena

Two Carrier Analysis of Persistent Photoconductivity in Modulation-Doped Structures

S. Alterovitz, S. Schacham, R. Mena, 1995 .

A 10-GHz amplifier using an epitaxial lift-off pseudomorphic HEMT device

S. Alterovitz, R. Romanofsky, R.R. Romanofsky, 1993, IEEE Microwave and Guided Wave Letters.

Room‐temperature determination of two‐dimensional electron gas concentration and mobility in heterostructures

S. Alterovitz, S. Schacham, R. Mena, 1993 .

Impact of Si/N ratios in a pre-metal Si/sub x/N/sub y/:H/sub z/ dielectric film on NMOS channel hot carrier reliability

R. Mena, J. Masin, M. Brugler, 1999, 1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460).

Characterization of Si (sub X)Ge (sub 1-x)/Si Heterostructures for Device Applications Using Spectroscopic Ellipsometry

Kang L. Wang, R. Sieg, S. Alterovitz, 1993 .

Theory of the effect of magnetic field on the excitonic photoluminescence linewidth in semiconductor alloys

R. Mena, K. Bajaj, G. Sanders, 1991 .

CHARACTERIZATION OF THE TRANSPORT PROPERTIES OF CHANNEL DELTA-DOPED STRUCTURES BY LIGHT-MODULATED SHUBNIKOV-DE HAAS MEASUREMENTS

S. Ringel, S. Bibyk, S. Alterovitz, 1995 .

Temperature independent quantum well FET with delta channel doping

S. Alterovitz, S. Schacham, R. Mena, 1992 .

Transport properties of epitaxial lift‐off films

S. Alterovitz, S. Schacham, R. Mena, 1993 .