Y. Akatsu

Dark Current in Selectively Doped N-AlGaAs/GaAs CCDs

H. Ohno, H. Hasegawa, N. Sano, 1988 .

Movpe Growth of InGaAs/lnAIAs Using Trimethylamine Alane Four Photonic and Electronic Devices

A. Kohzen, Y. Akatsu, Y. Tohmori, 1992, Sixth International Conference Metalorganic Vapor Phase Epitaxy.

MOVPE growth of InGaAs/InAlAs using trimethylamine alane for photonic and electronic devices

A. Kohzen, Y. Akatsu, Y. Tohmori, 1992 .

Effect of a coincident Pb flux during mbe growth on the electrical properties of GaAs and AlGaAs layers

H. Hasegawa, T. Hashizume, H. Ohno, 1987 .

Deep level characterization of AlGaAs and selectively doped N‐AlGaAs/GaAs heterojunctions

H. Ohno, H. Hasegawa, H. Kato, 1985 .