C. Vérié

发表

High pressure dependence of the electronic properties of bound states in n-type GaAs

M. Leroux, G. Neu, C. Vérié, 1986 .

Narrow bandgap semiconductors

C. Vérié, 1970 .

CdxHg1−xTe INFRARED PHOTOVOLTAIC DETECTORS

C. Vérié, J. Ayas, 1967 .

Expected pronounced strengthening of II–VI lattices with beryllium chalcogenides

C. Vérié, C. Vèrié, 1997 .

Influence of MOVPE growth parameters on the structural and optical properties of GaAs on Si(100)

A. Leycuras, A. Freundlich, P. Gibart, 1988 .

Evidence by Raman spectroscopy and x‐ray diffraction of a strong influence of H2O traces on the metalorganic vapor phase epitaxy of GaAs on Si

A. Leycuras, A. Freundlich, C. Vérié, 1987 .

III–V compound semiconductors for use in thin film cells or in monolytic multilayer cells

D. Bonnet, K. Heidler, L. J. Giling, 1988 .

Metal Organic Vapor Phase Epitaxy of GaAs on Si Using II/sub a/-Floride Buffer Layers

H. Zogg, S. Blunier, A. Freundlich, 1992, Sixth International Conference Metalorganic Vapor Phase Epitaxy.

Covalency engineering through alloying with beryllium chalcogenides in wide band-gap II–VI crystals

C. Vérié, 1998 .

9B3 - Semiconductor lasers and fast detectors in the infrared (3 to 15 microns)

Y. Marfaing, C. Vérié, M. Rodot, 1966 .

Silicon-Based Adaptation Structure for the Epitaxial Growth of Ga As Solar Cells

A. Leycuras, A. Freundlich, C. Vérié, 1987 .

Evidence of isovalent impurities in GaAs grown by molecular‐beam epitaxy

J. Massies, J. Contour, M. Leroux, 1986 .

Chemical shift of NMR in HgTe, CdTe and their alloys

B. Sapoval, C. Vérié, A. Willig, 1976 .

Heteroepitaxy of GaAs on Si: The effect of in situ thermal annealing under AsH3

A. Leycuras, A. Freundlich, G. Neu, 1988 .

Metalorganic chemical vapor deposition of YBa2Cu3O7-x using a special equipment for solid precursors

P. Gibart, C. Vérié, C. Sant, 1992 .

Growth of AlSb on insulating substrates by metal organics chemical vapour deposition

M. Leroux, A. Tromson-Carli, C. Bernard, 1980 .

Infrared laser modulation spectroscopy

C. Vérié, F. Raymond, 1973 .

Plasmon‐assisted recombination in narrow‐gap semiconductors in a magnetic field

P. Wolff, C. Vérié, S. Yuen, 1982 .

A InP Lattice-Matched Ga0.47.In0.53As Cell for Multispectral Photovoltaics

P. Garabedian, B. Beaumont, J. Guillaume, 1987 .

Low temperature photoluminescence of n‐type GaInAsP layers grown on InP by liquid phase epitaxy

B. Beaumont, J. Guillaume, C. Vérié, 1983 .

Acceptor Resonances in Hg 1 − x Cd x Te

C. Vérié, L. Liu, 1976 .

Beryllium substitution-mediated covalency engineering of II-VI alloys for lattice elastic rigidity reinforcement

C. Verie, C. Vérié, 1998 .

Influence of luminescence self‐absorption on photoluminescence decay in GaAs

B. Fofana, M. Leroux, C. Vérié, 1989 .

Minority‐carrier lifetime study of the pressure induced Γ‐X crossover in GaAs

M. Leroux, C. Vérié, G. Pelous, 1985 .

Influence of photon recycling on lifetime and diffusion coefficient in GaAs

C. Verie, P. Renaud, C. Vérié, 1992 .

AlSb as a candidate material for photovoltaic solar energy conversion

M. Leroux, A. Tromson-Carli, P. Gibart, 1979 .

High-pressure dependence of the room-temperature minority carrier lifetimes in GaAs

J. Sallese, M. Leroux, P. Gibart, 1989 .

Electronic properties of multinary alloys

F. Aymerich, C. Vérié, 1983 .

Spin-flip electron scattering in the zero-gap semiconductor Hg 0.86 Cd 0.14 Te

A. Mauger, W. Zawadzki, C. Vérié, 1977 .

Gigahertz cutoff frequency capabilities of CdHgTe photovoltaic detectors at 10.6 µ

M. Sirieix, C. Verie, C. Vérié, 1971 .

Ga1-X AlXAs/GaAs Monolithic Cascade Solar Cells : Limitation of the Ga Al As Cell Performance Near the Cross-Over Region

A. Rudra, A. Saletes, J. Contour, 1987 .

Epitaxial growth of InAs1−xSbx alloys by MOCVD

C. Vérié, G. Nataf, 1981 .

The present state and future prospects of high efficiency photovoltaic cells for solar power systems

Ch. Vèrié, A. Saletes, A. Saletes, 1991 .

Indirect gap semiconductors for photovoltaic solar energy conversion

M. Leroux, P. Gibart, C. Vérié, 1978 .