C. Chen

Schottky enhancement of contacts to n-GaAs via the exchange mechanism using NiAlxGa1−x as a metallization

Y. Chang, C. Kao, C. Chen, 1999 .

High Schottky barrier height of the Al/n‐GaAs diodes achieved by sputter deposition

J. W. Huang, Y. Chang, T. Kuech, 1994 .

An Investigation of the Al/n-GaAs Diodes with High Schottky Barrier Heights

Y. Chang, T. Kuech, C. Chen, 1993 .

Schottky enhancement of reacted NiAl/n‐GaAs contacts

T. Kuech, C. Chen, Y. Chang, 1994 .