K. Kajiyama

发表

Schottky barrier height of n‐InxGa1−xAs diodes

Yoshihiko Mizushima, Y. Mizushima, S. Sakata, 1973 .

Operational characteristics of a light amplifier

Y. Mizushima, T. Urisu, K. Kajiyama, 1977 .

SiO bond formation by oxygen implantation into silicon

Y. Kido, K. Kajiyama, Tomoaki Yoneda, 1997 .

Effects on spontaneous emission on dynamic characteristics of semiconductor lasers

S. Sakata, S. Hata, K. Kajiyama, 1977 .

Formation of size controlled Ge nanocrystals in SiO2 matrix by ion implantation and annealing

H. Harima, T. Yasue, T. Koshikawa, 2000 .

Concentration dependence of the gain spectrum in methanol solutions of rhodamine 6G

T. Urisu, K. Kajiyama, 1976 .

Dynamic mode interaction in multi-mode laser diodes

S. Sakata, S. Hata, K. Kajiyama, 1978 .

Surface Silicon Crystallinity and Anomalous Composition Profiles of Buried SiO2 and Si3N4 Layers Fabricated by Oxygen and Nitrogen Implantation in Silicon

S. Maeyama, K. Kajiyama, 1982 .

New Approach to Lowering of the Overvoltage for Oxygen Evolution on RuO2 and Related Metal-Oxide Electrodes by Ion Implantation

Y. Nakato, K. Murakoshi, K. Kajiyama, 2003 .

Phosphorus-Implanted Glass for Radiotherapy: Effect of Implantation Energy

I. Yamada, G. Takaoka, T. Kokubo, 2004 .

Fabrication of Ceramic–Polymer Photonic Crystals by Stereolithography and Their Microwave Properties

Y. Miyamoto, K. Kajiyama, S. Kirihara, 2002 .

Fabrication of electromagnetic crystals with a complete diamond structure by stereolithography

Katsuhiro Takenaga, Soshu Kirihara, Yoshinari Miyamoto, 2002 .

Preparation of glass for radiotherapy of cancer by P+ ion implantation at 100 keV

I. Yamada, G. Takaoka, T. Kokubo, 1997 .

Prototyping of Epoxy/ceramic Photonic Crystals by Stereolithography

Y. Miyamoto, K. Kajiyama, S. Kirihara, 2000 .

Barrier height of Hf/GaAs diode

S. Sakata, K. Kajiyama, O. Ochi, 1975 .

Formation of a Silicon-On-Insulator Structure by Solid-Phase Epitaxy

M. Tabe, K. Kajiyama, Y. Kunii, 1985 .

Solid-Phase Epitaxy of CVD Amorphous Si Film on Crystalline Si

M. Tabe, K. Kajiyama, Y. Kunii, 1982 .

Amorphous‐Si/crystalline‐Si facet formation during Si solid‐phase epitaxy near Si/SiO2 boundary

M. Tabe, K. Kajiyama, Y. Kunii, 1984 .

Novel low‐temperature recrystallization of amorphous silicon by high‐energy ion beam

J. Nakata, K. Kajiyama, Kenji Kajiyama, 1982 .

In Situ Self Ion Beam Annealing of Damage in Si during High Energy (0.53 MeV–2.56 MeV) As+ Ion Implantation

Mitsutoshi Takahashi, J. Nakata, K. Kajiyama, 1981 .

Impact-parameter dependent stopping powers for MeV He ions in Si crystals

Y. Kido, K. Kajiyama, Tomoaki Yoneda, 1999 .

Concentration dependence of the gain spectrum in energy‐transfer dye mixtures

Tsuneo Urisu, T. Urisu, K. Kajiyama, 1976 .

Device Application of Simox (Separation by IMplanted OXygen) Structure

S. Nakashima, K. Izumi, S. Nakashima, 1985 .

Solid‐phase lateral epitaxy of chemical‐vapor‐deposited amorphous silicon by furnace annealing

M. Tabe, K. Kajiyama, Y. Kunii, 1983 .

Precise Profiles for Arsenic Implanted in Si and SiO2 over a Wide Implantation Energy Range (10 keV–2.56 MeV)

J. Nakata, K. Kajiyama, 1982 .

Electrical and Optical Properties of SnO2-Si Heterojunctions

Y. Furukawa, K. Kajiyama, 1967 .

Trap Density in Epitaxially Grown GaAs

Y. Seki, Y. Furukawa, K. Kajiyama, 1967 .

Kinetics of Antimony Doping in Silicon Molecular Beam Epitaxy

M. Tabe, K. Kajiyama, 1983 .

Multiple SOI Structure Fabricate by High Dose Oxygen Implantation and Epitaxial Growth

Mitsutoshi Takahashi, K. Kajiyama, Y. Kunii, 1981 .

Optical Thickness Evaluation of Separation by IMplanted OXygen (SIMOX) Wafers

K. Kajiyama, Y. Morikawa, Iaso Hamaguchi Iaso Hamaguchi, 1996 .

The In-Ga-P Ternary Phase Diagram

K. Kajiyama, 1971 .

Vapor Pressure Dependence of the Relative Composition of III–V Mixed Crystals in Vapor Phase Epitaxy

K. Kajiyama, 1976 .

Lateral Solid-Phase Recrystallization from the Crystal Seed Selectively Formed by Excimer Laser Annealing in Ge-Ion-Implanted Amorphous Silicon Films

S. Akiyama, Tomoyuki Nohda, K. Kajiyama, 2000 .

Near-infrared photoluminescence from Ge nanocrystals in SiO2 matrices

Y. Kanemitsu, T. Kushida, K. Kajiyama, 2000 .

Performance of p-i-n photodiode compared with avalance photodiode in the longer-wavelength region of 1 to 2 μm

Y. Mizushima, Y. Mizushima, S. Hata, 1977 .

Reduced Dislocation Density in Simox Wafer by Multi-Energy Single Implantation

T. Yano, I. Hamaguchi, K. Kajiyama, 1992, 1992 IEEE International SOI Conference.

Characterization of density of trap states at the back interface of SIMOX wafers

T. Sugano, K. Kajiyama, A. Takubo, 1995, Proceedings International Conference on Microelectronic Test Structures.

Schottky-barrier devices with low barrier height

Y. Mizushima, S. Sakata, K. Kajiyama, 1974 .

Optimum built-in barrier height utilizing an extended concept of impedance matching

K. Kajiyama, Y. Mizushima, Y. Mizushima, 1978, Proceedings of the IEEE.

The anomalous refractive index in the ellipsometric evaluation of an inhomogeneous film

J. Nakata, K. Kajiyama, 1981 .

Extended‐defect reduction by uniform heating for P+‐implanted Si wafers

K. Kajiyama, R. Komatsu, 1983 .

Preparation of phosphorus-containing silica glass microspheres for radiotherapy of cancer by ion implantation

T. Kokubo, M. Kawashita, F. Miyaji, 1999, Journal of materials science. Materials in medicine.

Preparation of radiotherapy glass by phosphorus ion implantation at 100 keV.

I. Yamada, G. Takaoka, T. Kokubo, 1997, Journal of biomedical materials research.