T. Mizuno

发表

(Invited) Dopant-Atom-Based Tunnel SOI-MOSFETs

D. Moraru, H. Mizuta, M. Tabe, 2013 .

Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nano-devices

D. Moraru, H. Mizuta, M. Muruganathan, 2015, Nanoscale Research Letters.

Potential profile and photovoltaic effect in nanoscale lateral pn junction observed by Kelvin probe force microscopy

D. Moraru, M. Tabe, R. Jablonski, 2014 .

Individuality of Dopants in Silicon Nano-pn Junctions

D. Moraru, M. Tabe, R. Jablonski, 2014 .

Effects of deep-level dopants on the electronic potential of thin Si pn junctions observed by Kelvin probe force microscope

D. Moraru, M. Tabe, R. Jablonski, 2013 .

Ab initio analysis of donor state deepening in Si nano-channels

D. Moraru, H. Mizuta, M. Tabe, 2012, 2012 IEEE Silicon Nanoelectronics Workshop (SNW).

Single-electron transport through a single donor at elevated temperatures

D. Moraru, M. Tabe, E. Hamid, 2012, 2012 IEEE Silicon Nanoelectronics Workshop (SNW).

Evaluation of total uncertainty in the dimension measurements using critical-dimension measurement scanning electron microscopes

T. Mizuno, F. Mizuno, Minoru Shimizu, 1998 .

Observation of nanosize effect in lateral nanoscale p-n and p-i-n junctions

D. Moraru, M. Tabe, S. Purwiyanti, 2013, 2013 International Conference on QiR.

Single-Electron Charging in Phosphorus Donors in Silicon Observed by Low-Temperature Kelvin Probe Force Microscope

D. Moraru, M. Tabe, M. Anwar, 2011 .

Photon-Induced Random Telegraph Signal Due to Potential Fluctuation of a Single Donor–Acceptor Pair in Nanoscale Si p–n Junctions

D. Moraru, H. Mizuta, M. Tabe, 2012 .

Single-electron transfer between two donors in nanoscale thin silicon-on-insulator field-effect transistors

D. Moraru, M. Tabe, E. Hamid, 2010 .

Experimental and Ab Initio Study of Donor State Deepening in Nanoscale SOI-MOSFETs

D. Moraru, H. Mizuta, M. Tabe, 2013 .

Electrical control of capacitance dispersion for single-electron turnstile operation in common-gated junction arrays

D. Moraru, M. Tabe, T. Mizuno, 2010 .

Single-Electron Transfer by Inter-Dopant Coupling Tuning in Doped Nanowire Silicon-on-Insulator Field-Effect Transistors

D. Moraru, M. Tabe, T. Mizuno, 2009 .

Tunneling Transport in Quantum Dots Formed by Coupled Dopant Atoms

D. Moraru, M. Tabe, A. Samanta, 2015 .

Si-Based Single-Dopant Atom Devices

D. Moraru, M. Tabe, M. Anwar, 2011 .

Tunable Single-Electron Turnstile Using Discrete Dopants in Nanoscale SOI-FETs

D. Moraru, M. Tabe, T. Mizuno, 2011 .

Control of dopant-induced quantum dots by channel geometry

D. Moraru, M. Tabe, T. Mizuno, 2010, 2010 Silicon Nanoelectronics Workshop.

S INGLE -E LECTRON T RANSPORT C HARACTERISTICS IN Q UANTUM D OT A RRAYS D UE TO I ONIZED D OPANTS

D. Moraru, M. Tabe, T. Mizuno, 2009 .

Single-electron transport characteristics in quantum dot arrays due to ionized dopants

D. Moraru, M. Tabe, T. Mizuno, 2009 .

Si Single-Electron SOI-MOSFETs: Interplay with Individual Dopants and Photons

D. Moraru, M. Tabe, Z. A. Burhanudin, 2008 .

Observation of negative differential conductance in nanoscale p-n junctions

D. Moraru, M. Tabe, S. Purwiyanti, 2013, 2013 International Conference on QiR.

Present State of the Surface Potential Measurements by Kelvin Force Microscopy. Potential Measurement of Si Nano-structures by Kelvin Probe Force Microscopy.

M. Tabe, Y. Ishikawa, T. Kamimura, 2001 .

Single-electron tunneling operation via a-few-donor quantum dots in SOI-FETs up to room temperature

D. Moraru, M. Tabe, A. Samanta, 2016, 2016 IEEE Silicon Nanoelectronics Workshop (SNW).

Trapping of a photoexcited electron by a donor in nanometer-scale phosphorus-doped silicon-on-insulator field-effect transistors

D. Moraru, M. Tabe, T. Mizuno, 2011 .

Quantum confinement effects in Si quantum well and dot structures fabricated from ultrathin silicon-on-insulator wafers

M. Tabe, Y. Ishikawa, T. Mizuno, 2001 .

Atomistic nature in band-to-band tunneling in two-dimensional silicon pn tunnel diodes

D. Moraru, H. Mizuta, M. Muruganathan, 2016 .

Electron-tunneling operation of single-donor-atom transistors at elevated temperatures

Hiroshi Mizuta, Michiharu Tabe, Earfan Hamid, 2013 .

Atom devices based on single dopants in silicon nanostructures

D. Moraru, M. Tabe, M. Anwar, 2011, Nanoscale research letters.

Dopant-induced random telegraph signal in nanoscale lateral silicon pn diodes at low temperatures

D. Moraru, M. Tabe, R. Jablonski, 2013 .

Electric-field-assisted formation of an interfacial double-donor molecule in silicon nano-transistors

D. Moraru, M. Tabe, A. Samanta, 2015, Scientific Reports.

Effect of selective doping on the spatial dispersion of donor-induced quantum dots in Si nanoscale transistors

D. Moraru, M. Tabe, R. Jablonski, 2015 .

Comparative study of donor-induced quantum dots in Si nano-channels by single-electron transport characterization and Kelvin probe force microscopy

D. Moraru, M. Tabe, R. Jablonski, 2015 .

Transport spectroscopy of coupled donors in silicon nano-transistors

D. Moraru, H. Mizuta, M. Tabe, 2014, Scientific Reports.

Single-electron transport through single dopants in a dopant-rich environment.

D. Moraru, M. Tabe, Y. Ono, 2010, Physical review letters.

Fabrication of Gallium Nitride Grating by Interferometric Irradiation Using Focused Femtosecond Laser

K. Yamasaki, T. Mizuno, 2006 .

Sub-nanometer calibration of CD-SEM line width by using STEM

Satoru Takahashi, Kiyoshi Takamasu, Takeshi Mizuno, 2010, Advanced Lithography.

Observation of individual dopants in a thin silicon layer by low temperature Kelvin Probe Force Microscope

D. Moraru, M. Tabe, M. Anwar, 2008 .

Enhancement of inter-band tunneling due to low-dimensionality of lateral 2D Silicon Esaki diodes

D. Moraru, H. Mizuta, M. Tabe, 2016, 2016 IEEE Silicon Nanoelectronics Workshop (SNW).