J. John

Novel Collector Structure Enabling Low-Cost Millimeter-Wave SiGe:C BiCMOS Technology

J. Kirchgessner, D. Morgan, Hao Li, 2007, 2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium.

Development of a Cost-Effective, Selective-Epi, SiGe:C HBT Module for 77GHz Automotive Radar

Hao Li, J. Kirchgessner, D. Morgan, 2006, 2006 Bipolar/BiCMOS Circuits and Technology Meeting.

Hyperabrupt-junction varactor for mmWave SiGe:C BiCMOS, enabling 77GHz VCO/TX with 13-15GHz tuning range

V. P. Trivedi, J. Kirchgessner, J. P. John, 2010, 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

Integration of selectively implanted collector (SIC) of SiGe:C HBT for optimised performance and manufacturability

G. Niu, B. Brown, D. Hammock, 2003, 2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440).

A 90nm BiCMOS technology featuring 400GHz fMAX SiGe:C HBT

V. P. Trivedi, J. Kirchgessner, D. Morgan, 2016, 2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).