P. Meunier-Beillard

发表

A Novel Fully Self-Aligned SiGe:C HBT Architecture Featuring a Single-Step Epitaxial Collector-Base Process

G.A.M. Hurkx, S. Decoutere, T. Vanhoucke, 2007, 2007 IEEE International Electron Devices Meeting.

On the Use of a SiGe Spike in the Emitter to Improve the $f_{T}\hbox{xBV}_{\rm CEO}$ Product of High-Speed SiGe HBTs

S. Decoutere, S. Van Huylenbroeck, A. Sibaja-Hernandez, 2007, IEEE Electron Device Letters.

A new technique to fabricate ultra-shallow-junctions, combining in situ vapour HCl etching and in situ doped epitaxial SiGe re-growth

O. Richard, R. Lindsay, R. Loo, 2004 .

Structural and optical properties of Ge islands grown in an industrial chemical vapor deposition reactor

H. Bender, M. Goryll, R. Loo, 2001 .

Exciton trapping in LaPO 4 doped with trivalent cerium and/or terbium ions

C. Dujardin, B. Moine, P. Meunier-Beillard, 1999 .

Fabrication of strained Si nMOSFET transistors on thin buffer layers with selective and non-selective epitaxial growth techniques

R. Loo, M. Caymax, R. Rooyackers, 2005 .

Selective epitaxial deposition of strained silicon: a simple and effective method for fabricating high performance MOSFET devices

Wilfried Vandervorst, K. De Meyer, Romain Delhougne, 2004 .

N2 as carrier gas: an alternative to H2 for enhanced epitaxy of Si, SiGe and SiGe:C

M. Caymax, W. Vandervorst, M. Hopstaken, 2004 .

Quantitative prediction of junction leakage in bulk-technology CMOS devices

M. Potter, M. Hopstaken, R. Duffy, 2010 .

Selective) Epitaxial Growth of Strained Si to Fabricate Low Cost and High Performance CMOS Devices

R. Loo, M. Caymax, M. Heyns, 2004 .

Development of a new type of SiGe thin strain relaxed buffer based on the incorporation of a carbon-containing layer

Wilfried Vandervorst, Roger Loo, Romain Delhougne, 2004 .