P. K. Bhattacharya

发表

Effect of ion implantation on the refractive index of glass

P. K. Bhattacharya, N. Sarma, Apoorva G. Wagh, 1976 .

Indium diffusion in the chemical potential gradient at an In0.53Ga0.47As/In0.52Al0.48As interface

G. P. Kothiyal, R. J. Baird, T. Potter, 1988 .

Molecular beam epitaxial growth and optical properties of red-emitting (λ = 650 nm) InGaN/GaN disks-in-nanowires on silicon

Martin Strassburg, Martin Mandl, Shafat Jahangir, 2013 .

Reduction of dislocation density in mismatched SiGe/Si using a low-temperature Si buffer layer

Jae-Sung Rieh, J. Rieh, K. Linder, 1997 .

Gallium‐implanted silicon

P. K. Bhattacharya, A. G. Wagh, N. Sarma, 1975 .

Impact ionization coefficient ratio in InGaAs/InAlAs superlattice avalanche photodiodes determined from noise measurements

G. Bosman, P. K. Bhattacharya, Young Yu, 1987 .

Temperature profiles in a two-component heterogeneous system heated with a cw laser

S. Gupta, P. K. Bhattacharya, A. G. Wagh, 1982 .

Epitaxial growth and characterization of MnAs on InP and In0.53Ga0.47As

D. Basu, Wei Guo, H. Kum, 2009 .