Oshiyama

发表

Electronic structure of the superatom: A quasiatomic system based on a semiconductor heterostructure.

Ohnishi, Inoshita, Oshiyama, 1986, Physical review letters.

New one-dimensional conductors: Graphitic microtubules.

Sawada, Hamada, N. Hamada, 1992, Physical review letters.

Cohesive mechanism and energy bands of solid C60.

A. Oshiyama, Saito, Oshiyama, 1991, Physical review letters.

Microscopic theory of impurity-defect reactions and impurity diffusion in silicon.

Kelly, Car, Pantelides, 1985, Physical review letters.

Vacancy in Si: Successful description within the local-density approximation.

Oshiyama, Sugino, Osamu Sugino, 1992, Physical review letters.

Electronic and geometric structures of C70.

A. Oshiyama, Saito, Oshiyama, 1991, Physical review. B, Condensed matter.

Anisotropic momentum distribution of positron-annihilation radiation in semiconductors.

Saito, Tanigawa, Oshiyama, 1991, Physical review. B, Condensed matter.

Role of Ge surface segregation in Si/Ge interfacial ordering: Interface formation on a monohydride surface.

Sakai, Oshiyama, Tatsumi, 1995, Physical review. B, Condensed matter.

Atomic and electronic structures of oxygen on Si(100) surfaces: Metastable adsorption sites.

Miyamoto, Oshiyama, 1990, Physical review. B, Condensed matter.

Structures of steps and appearances of {311} facets on Si(100) surfaces.

Oshiyama, 1995, Physical review letters.

Sr6C60 and Ba6C60: Semimetallic fullerides.

Saito, Oshiyama, Atsushi Oshiyama, 1993, Physical review letters.

Diffusion and dimer exchange in surfactant-mediated epitaxial growth.

Yu., Oshiyama, 1994, Physical review letters.

Lifetimes of positrons trapped at Si vacancies.

Saito, Oshiyama, 1996, Physical review. B, Condensed matter.

Scanning-tunneling-microscopy images of Ge adsorbed on an As-covered Si(001) surface.

Yu., Oshiyama, Ide, 1994, Physical review. B, Condensed matter.

Effect of anisotropic Coulomb field on Si 2p core levels in oxidized silicon.

Miyamoto, Oshiyama, 1991, Physical review. B, Condensed matter.

Reaction pathway for Sb-dimer rotation in conversion of Sb4 precursors on Si(001).

Yu., Oshiyama, 1994, Physical review. B, Condensed matter.

Structures and reactions of missing dimers in epitaxial growth of Ge on Si(100).

Yu., Oshiyama, 1995, Physical review. B, Condensed matter.

Electronic structure of Si46 and Na2Ba6Si46.

Saito, Oshiyama, 1995, Physical review. B, Condensed matter.

Electronic structure of the silicon divacancy.

Oshiyama, Sugino, 1990, Physical review. B, Condensed matter.

Energetics in the initial stage of oxidation of silicon.

Miyamoto, Oshiyama, 1991, Physical review. B, Condensed matter.

Stability and electronic structure of ultrathin-layer superlattices: (GaAs)n/(AlAs)n.

Saito, Oshiyama, 1987, Physical review. B, Condensed matter.

Microscopic mechanism of atomic diffusion in Si under pressure.

Oshiyama, Sugino, 1992, Physical review. B, Condensed matter.

Design of C60-graphite cointercalation compounds.

Saito, Oshiyama, 1994, Physical review. B, Condensed matter.

Dimer exchange mechanism for substitutional As adsorption on Si(100).

Yu., Oshiyama, 1993, Physical review letters.

DX center: Crossover of deep and shallow states in Si-doped AlxGa1-xAs.

Ohnishi, Oshiyama, 1986, Physical Review B (Condensed Matter).

Electronic structures of solid BC59.

Miyamoto, Hamada, Saito, 1992, Physical review. B, Condensed matter.

Ionic metal KxC60: Cohesion and energy bands.

Saito, Oshiyama, 1991, Physical review. B, Condensed matter.

Real-space-partitioned separable pseudopotential.

Saito, Oshiyama, Sugino, 1992, Physical Review B (Condensed Matter).

Atomic and electronic structures of an interface between silicon and beta -cristobalite.

Miyamoto, Oshiyama, Hane, 1990, Physical review. B, Condensed matter.