S. S. Mikhrin

Temperature characteristics of low-threshold high-efficiency quantum-dot lasers with the emission wavelength from 1.25 to 1.29 µm

A. R. Kovsh, D. Bimberg, N. N. Ledentsov, 2003 .

All quantum dot modelocked vertical external cavity surface emitting laser

A. R. Kovsh, M. Golling, U. Keller, 2009, 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference.

Monolithic Hybrid and Passive Mode-Locked 40GHz Quantum Dot Laser Diodes

D. A. Livshits, A. R. Kovsh, K. Yvind, 2006, 2006 European Conference on Optical Communications.

120°C 20 Gbit/s operation of 980 nm VCSEL

Nikolai N. Ledentsov, Friedhelm Hopfer, Alex Mutig, 2008 .

High efficiency (ηD>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substrates

D. A. Livshits, A. R. Kovsh, D. Bimberg, 2002 .

The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix

D. Bimberg, N. N. Ledentsov, D. S. Sizov, 2002 .

Ultralow threshold long wavelength single-mode quantum dot VCSELs on GaAs substrates

D. A. Livshits, N. N. Ledentsov, A. V. Kozhukhov, 2005 .

Lasing at a wavelength close to 1.3 µm in InAs quantum-dot structures

A. R. Kovsh, D. Bimberg, N. N. Ledentsov, 1999 .

High-power quantum dot based semiconductor disk laser

A. R. Kovsh, U. Keller, T. Sudmeyer, 2009, CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference.