D.H. Kwak

Highly manufacturable 90 nm DRAM technology

S.H. Hong, C.H. Cho, D.J. Lee, 2002, Digest. International Electron Devices Meeting,.

A DRAM technology using MIM BST capacitor for 0.15 /spl mu/m DRAM generation and beyond

Y.S. Hwang, B.J. Park, K.N. Kim, 1999, 1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325).

Correlation between Stress-Induced Leakage Current (SILC) and the HfO/sub 2/ bulk trap density in a SiO/sub 2//HfO/sub 2/ stack

R. Degraeve, F. Crupi, G. Groeseneken, 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

Hot carrier degradation on n-channel HfSiON MOSFETs: effects on the device performance and lifetime

L. Pantisano, R. Degraeve, A. Paccagnella, 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..