Jean-Paul Salvestrini

发表

BAlN thin layers for deep UV applications

Xin Li, Sophie Bouchoule, Gilles Patriarche, 2015 .

Analytical modeling of polarization effects in InGaN double hetero-junction p-i-n solar cells

Rabeb Belghouthi, Christyves Chevallier, J. Salvestrini, 2016 .

Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications

Abdallah Ougazzaden, Paul L. Voss, Yacine Halfaya, 2019, Advanced Materials Technologies.

Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy

Xin Li, Gilles Patriarche, Abdallah Ougazzaden, 2016 .

Heterogeneous Integration of Thin-Film InGaN-Based Solar Cells on Foreign Substrates with Enhanced Performance

Xin Li, Abdallah Ougazzaden, Paul L. Voss, 2018, ACS Photonics.

Bandgap energy bowing parameter of strained and relaxed InGaN layers

Nicolas Fressengeas, T. Moudakir, G. Orsal, 2014 .

Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN

Abdallah Ougazzaden, Paul L. Voss, Xin Li, 2016 .

New material with strong electro‐optic effect: Rubidium hydrogen selenate (RbHSeO4)

Michel Aillerie, Zbigniew Czapla, Marc D. Fontana, 1994 .

Frequency and wavelength dependences of electro-optic coefficients in inorganic crystals

Michel Aillerie, Mustapha Abarkan, Marc D. Fontana, 2003 .