Hao Lee

Photoluminescence study of in situ annealed InAs quantum dots: Double-peak emission associated with bimodal size distribution

Weidong Yang, Peter C. Sercel, Roger R. Lowe-Webb, 1998 .

Formation of InAs/GaAs quantum dots by molecular beam epitaxy: Reversibility of the islanding transition

Weidong Yang, Peter C. Sercel, Roger R. Lowe-Webb, 1997 .

Effect of carrier emission and retrapping on luminescence time decays in InAs/GaAs quantum dots

Weidong Yang, Peter C. Sercel, Roger R. Lowe-Webb, 1997 .

Auger coefficients in type-II InAs/Ga1−xInxSb quantum wells

Christopher L. Felix, William W. Bewley, Jerry R. Meyer, 1998 .