M. Enciso-Aguilar

High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET

Paul Crozat, R. Adde, Frédéric Aniel, 2003 .

Modelling and measurements of the parasitic electrostatic capacitances in Si/SiGe n-HFET

Frédéric Aniel, Thomas Hackbarth, Nicolas Zerounian, 2007 .

Sub-100 nm Gate Technologies for Si/SiGe-Buried-Channel RF Devices

M. Zeuner, Frédéric Aniel, Thomas Hackbarth, 2003 .

SiGe heterojunction bipolar transistor issues towards high cryogenic performances

Paul Crozat, Alain Chantre, Pascal Chevalier, 2009 .

Sub 100 nm Gate Technologies for Si/SiGe Buried Channel RF Devices

M. Zeuner, Frédéric Aniel, Thomas Hackbarth, 2002 .