Y. Watanabe

发表

Light propagation characteristics of straight single-line-defect waveguides in photonic crystal slabs fabricated into a silicon-on-insulator substrate

Toshihiko Baba, A. Sakai, A. Motegi, 2002 .

Re-examination of Flat-Band Voltage Shift for High-k MOS Devices

T. Nabatame, A. Toriumi, Y. Morita, 2007, 2007 IEEE Symposium on VLSI Technology.

Self-organized (111) faceted NiSi2 source and drain for advanced SOI MOSFETs

N. Mise, T. Nabatame, A. Toriumi, 2006, 2006 International Workshop on Junction Technology.

Sub-10 nm gate length metal/high-k SOI MOSFETs with NiSi/sub 2/ [111]-facetted full silicide source/drain

N. Mise, T. Nabatame, A. Toriumi, 2005, 63rd Device Research Conference Digest, 2005. DRC '05..

(111)-Faceted Metal Source and Drain for Aggressively Scaled Metal/High- $k$ MISFETs

N. Mise, T. Nabatame, A. Toriumi, 2008, IEEE Transactions on Electron Devices.

Structural Metastability and Size Scalability of Phase-Controlled HfO2 Formed through Cap-PDA

T. Nabatame, A. Toriumi, S. Migita, 2009 .

Design and demonstration of very high-k (k∼50) HfO2 for ultra-scaled Si CMOS

A. Toriumi, H. Ota, S. Migita, 2008, 2008 Symposium on VLSI Technology.

Achievement of Higher-k and High-Φ in Phase Controlled HfO2 Film Using Post Gate Electrode Deposition Annealing

T. Nabatame, A. Toriumi, S. Migita, 2007 .

Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface

A. Toriumi, Shinji Migita, Toshihide Nabatame, 2008 .

Gate-First Processed FUSI/HfO2/HfSiOx/Si MOSFETs with EOT=0.5 nm - Interfacial Layer Formation by Cycle-by-Cycle Deposition and Annealing

T. Nabatame, A. Toriumi, S. Migita, 2007, 2007 IEEE International Electron Devices Meeting.

Intrinsic Origin of Electron Mobility Reduction in High-k MOSFETs - From Remote Phonon to Bottom Interface Dipole Scattering

T. Nabatame, A. Toriumi, S. Migita, 2007, 2007 IEEE International Electron Devices Meeting.